Silicon PNP Medium Power Transistor UTC UP3855G-AA3-R Designed for Power Management and DC-DC Circuits
Key Attributes
Model Number:
UP3855G-AA3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
20nA
DC Current Gain:
200@1A,5V
Transition Frequency(fT):
120MHz
Vce Saturation(VCE(sat)):
275mV
Type:
PNP
Pd - Power Dissipation:
1.6W
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
140V
Operating Temperature:
-
Mfr. Part #:
UP3855G-AA3-R
Package:
SOT-223
Product Description
Product Overview
The UTC UP3855 is a PNP silicon transistor designed for medium power applications, featuring low saturation voltage. This characteristic leads to very low on-state losses, making it ideal for driving, power management functions, and DC-DC circuits.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon
- Type: PNP Medium Power Low Saturation Transistor
Technical Specifications
| Parameter | Symbol | SOT-223 (Note 1) | SOT-89 (Note 2) | UNIT |
| Power Dissipation | PD | 3.0 | 0.6 | W |
| Junction to Ambient Thermal Resistance | θJA | 42 | 78 | °C/W |
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | UNIT |
| Collector-Base Breakdown Voltage | VCBO | IC=-100μA | -180 | -200 | V | |
| Collector-Emitter Breakdown Voltage | VCEO | IC=-10mA (Note 1) | -140 | -160 | V | |
| Emitter-Base Breakdown Voltage | VEBO | IE=-100μA | -7.0 | -8.0 | V | |
| Collector Cut-Off Current | ICBO | VCB=-150V | <1 | -20 | nA | |
| Collector Cut-Off Current | ICER | VCB=-150V, R≤1kΩ | <1 | -20 | nA | |
| Emitter Cut-Off Current | IEBO | VEB=-6V | <1 | -10 | nA | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC=-0.1A, IB=-5mA | -40 | -60 | mV | |
| IC=-0.5A, IB=-50mA | -55 | -80 | mV | |||
| IC=-1A, IB=-100mA | -85 | -120 | mV | |||
| IC=-3A, IB=-300mA | -275 | -360 | mV | |||
| Base-Emitter Saturation Voltage | VBE(SAT) | IC=-3A, IB=-300mA(Note 1) | -940 | -1040 | mV | |
| IC=-3A, IB=-300mA | -940 | -1040 | mV | |||
| Static Forward Current Transfer Ratio | hFE | IC=-10mA, VCE=-5V | 100 | 225 | ||
| IC=-1A, VCE=-5V | 100 | 200 | 300 | |||
| IC=-3A, VCE=-5V | 45 | |||||
| Transition Frequency | fT | IC=-100mA, VCE=-10V f=50MHz | 120 | MHz | ||
| Output Capacitance | COBO | VCB=-10V, f=1MHz | 33 | pF | ||
| Switching Times | tON | IC=-1A, VCC=-50V, IB1=-IB2=-100mA | 150 | ns | ||
| Switching Times | tOFF | IC=-1A, VCC=-50V, IB1=-IB2=-100mA | 750 | ns |
1808272038_UTC-UP3855G-AA3-R_C84920.pdf
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