Low RDS on Slkor BSS138KDW Dual N Channel MOSFET ideal for DC DC converter load switching solutions
Key Attributes
Model Number:
BSS138KDW
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
200mA
RDS(on):
6Ω@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
2 N-Channel
Output Capacitance(Coss):
12pF
Input Capacitance(Ciss):
18pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
1.7nC@10V
Mfr. Part #:
BSS138KDW
Package:
SOT-363
Product Description
Product Overview
The BSS138KDW is a 50V/0.2A Dual N-Channel MOSFET designed for high-density cell applications, offering low RDS(on) for efficient operation. It functions as a voltage-controlled small signal switch, providing a rugged and reliable solution with high saturation current capability and ESD protection. This MOSFET is ideal for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: SLKORMicro
- Model: BSS138KDW
- Package: SOT-363
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit | |
| Static Electrical Characteristics @ TJ = 25C (unless otherwise stated) | Gate-Source Voltage | VGS | ±20 | V | |||
| Drain-Source Breakdown Voltage | BV(BR)DSS | VGS=0VID=250A | 50 | V | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=40VVGS=0V | 1 | µA | |||
| Gate-Body Leakage Current | IGSS | VGS=±20VVDS=0V | ±10 | µA | |||
| Gate Threshold Voltage | VGS(th) | VDS=VGSID=250µA | 0.6 | 1.0 | 1.5 | V | |
| Drain-Source On-State Resistance | RDS(on) | VGS=10VID=0.3A | 1.4 | 5.0 | Ω | ||
| VGS=4.5VID=0.2A | 1.7 | 6.0 | Ω | ||||
| Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) | Input Capacitance | CISS | VDS=50VVGS=0V f=1MHz | 18 | pF | ||
| Output Capacitance | COSS | VDD=30VID=0.2A VGS=4.5VRG=10Ω | 12 | pF | |||
| Reverse Transfer Capacitance | CRSS | 7 | pF | ||||
| Switching Characteristics | Total Gate Charge | Qg | VDS=50VID=0.2AVGS=10V | 1.7 | nC | ||
| Turn-on Delay Time | td(on) | 4.8 | nS | ||||
| Turn-Off Delay Time | td(off) | 18 | nS | ||||
| Reverse recovery Time | trr | VGS=0V,IS=200mA,VR=25V, dIS/dt=-100A/μs | 31 | nS | |||
| Source- Drain Diode Characteristics | Forward on voltage | VSD | Tj=25°C, Is=0.1A | 1.2 | V | ||
| Diode Continuous Forward Current | IS | Tc=25°C | 0.2 | A | |||
| Absolute Maximum Ratings | Maximum Power Dissipation | PD | Tc=25°C | 0.15 | W | ||
| Pulse Drain Current | IDM | Tc=25°C | 0.95 | A | |||
| Tested Continuous Drain Current | ID | Tc=25°C | 0.2 | A | |||
| Common Ratings | Thermal Resistance Junction-to-Ambient | RθJA | Mounted on Large Heat Sink | 833 | °C/W | ||
| Maximum Junction Temperature | TJ | 150 | °C | ||||
| Storage Temperature Range | TSTG | -55 | to | 155 | °C |
2408271001_Slkor-BSS138KDW_C41369500.pdf
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