N Channel Enhancement Mode Transistor Slkor SL80N03 for in High Frequency and Hard Switched Circuits
Key Attributes
Model Number:
SL80N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10mΩ@5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
230pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.015nF@15V
Pd - Power Dissipation:
83W
Gate Charge(Qg):
61nC@10V
Mfr. Part #:
SL80N03
Package:
TO-252
Product Description
Product Overview
This N-Channel Enhancement Mode Field Effect Transistor is designed for power switching applications, particularly in hard-switched and high-frequency circuits, and uninterruptible power supplies. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and excellent stability and uniformity with high EAS. The package is optimized for good heat dissipation.
Product Attributes
- Brand: SLKormicro
- Model: SL80N03
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1.0 | 2.5 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=30A | 6.5 | m | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 5V, ID=24A | 10 | m | ||
| Diode Forward Voltage | VSD | IS=24A,VGS=0V | 1.3 | V | ||
| Maximum Body-Diode Continuous Current | IS | 80 | A | |||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHZ | 2015 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHZ | 250 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHZ | 230 | pF | ||
| Total Gate Charge | Qg | VGS=10V,VDS=10V,ID=30A | 61 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V,VDS=10V,ID=30A | 8.2 | nC | ||
| Gate-Drain Charge | Qg | VGS=10V,VDS=10V,ID=30A | 7.8 | nC | ||
| Reverse Recovery Charge | Qrr | IF=80A, di/dt=100A/us | 32 | nC | ||
| Reverse Recovery Time | trr | IF=80A, di/dt=100A/us | 12 | ns | ||
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=10V,RG=2.7 , ID =30A | 20 | ns | ||
| Turn-on Rise Time | tr | VGS=10V,VDD=10V,RG=2.7 , ID =30A | 15 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=10V,VDD=10V,RG=2.7 , ID =30A | 60 | ns | ||
| Turn-off fall Time | tf | VGS=10V,VDD=10V,RG=2.7 , ID =30A | 10 | ns | ||
| Drain-source Voltage | VDS | 30 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current | ID | 80 | A | |||
| Pulsed Drain Current | IDM | 170 | A | |||
| Single Pulse Avalanche Energy | EAS | 306 | mJ | |||
| Total Power Dissipation | PD | 83 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.74 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 |
2201210930_Slkor-SL80N03_C2965543.pdf
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