SCR Bridge Leg 1200 Volt 60 Amp Module ST STTN6050H-12M1Y for Heating Controllers and Power Supplies
Key Attributes
Model Number:
STTN6050H-12M1Y
Product Custom Attributes
Holding Current (Ih):
-
Current - Gate Trigger(Igt):
-
Voltage - On State(Vtm):
-
Current - On State(It(RMS)):
60A
Peak Off - State Voltage(Vdrm):
1.2kV
Current - Surge(Itsm@f):
600A
SCR Type:
1 SCR
Gate Trigger Voltage (Vgt):
-
Operating Temperature:
-
Mfr. Part #:
STTN6050H-12M1Y
Product Description
Product Description
The STTN6050H-12M1Y is a 1200 V, 60 A full controlled SCR bridge leg integrated into an ACEPACK SMIT module. It is capable of controlling AC current up to 85 ARMS when connected to an AC line network. This device enables the design of single or three-phase AC DC rectifier bridges, phase recombination branches for totem pole PFCs up to 75 A(AVE) output current, AC phasing arms of line inverters, and back-to-back SCR based AC switches for heating controllers or UPS bypass relays. Its top cooling pad, positioned opposite the printed circuit board, facilitates automatic assembly of the PCB-module-heat sink stack, resulting in a low-profile and compact converter for on-board chargers, charging stations, motor drives, UPS, and AC-DC power supplies. Leveraging ST's high-temperature automotive ASD technology, it offers enhanced noise immunity of 1000 V/s at a 150 C junction temperature (Tj) and over-voltage robustness up to 1400 V (VDSM).
Product Attributes
- Brand: STMicroelectronics
- Certifications: AEC-Q101 qualified, UL recognized (File E81734), ECOPACK2 compliant
- Module Qualification: AQG324 recommendation
- Package Type: SMD with isolated top cooled tab
- Insulation: 4000 V insulated tab-to-lead package
- Terminal Pin Orientation: Opposite to cooling side for automatic PCB mounting to heat sink
- Creepage Distance: Meets IEC 60664-1 standards (250 VAC, material group 2, pollution degree 3; 600 VAC, material group 2, pollution degree 2)
Technical Specifications
| Symbol | Parameter | Value | Unit |
| IT(RMS) | RMS on-state current (sine half wave) @ TC = 106 C | 60 | A |
| IT(AV) | Average on-state current (sine half wave) | 38 | A |
| ITSM | Non repetitive surge peak on-state current (VR = 0 V, IG = 100 mA, tp = 8.3 ms, Tj initial = 25 C) | 660 | A |
| ITSM | Non repetitive surge peak on-state current (VR = 0 V, IG = 100 mA, tp = 10 ms, Tj initial = 25 C) | 600 | A |
| I2t | I2t value for fusing (tp = 10 ms, Tj = 25 C) | 1800 | As |
| dl/dt | Critical rate of rise of on-state SCR current (IG = 2 x IGT, tr 100 ns, f = 50 and 60 Hz, Tj = 150 C) | 200 | A/s |
| VDRM / VRRM | Repetitive off-state voltage (Tj = -40 C to 150 C) | 1200 | V |
| VDSM / VRSM | Non repetitive surge peak off-state voltage (tp = 10 ms, Tj = 25 C) | 1400 | V |
| VGM | Peak forward SCR gate voltage (tp = 20 s, Tj = 150 C) | 10 | V |
| IGM | Peak forward SCR gate current (tp = 20 s, Tj = 150 C) | 8 | A |
| IGCM | Peak cathode drive current (C1 and C2 pins, tp = 20 s, Tj = 150 C) | 8 | A |
| VRGM | Peak SCR gate voltage (Tj = 25 C) | 5 | V |
| PG(AV) | Average SCR gate power dissipation (Tj = 150 C) | 1 | W |
| Tstg | Storage junction temperature range | -40 to +150 | C |
| Tj | Operating junction temperature range | -40 to +150 | C |
| VINS | RMS tab-to-pin lead insulation voltage (1 minute) | 4 | kV |
| IGT | SCR triggering current (VD = 12 V, RL = 33 , Tj = 25 C) | Min. 10 / Max. 50 | mA |
| VGT | SCR triggering voltage (VD = 12 V, RL = 33 , Tj = 25 C) | Max. 1.3 | V |
| VGD | SCR non-triggering voltage (VD = 2/3 VDRM, RL = 3.3 k, Tj = 150 C) | Min. 0.2 | V |
| IH | SCR holding current (IT = 500 mA, gate open, Tj = 25 C) | Max. 100 | mA |
| IL | SCR latching current (IG = 1.2 x IGT, Tj = 25 C) | Max. 125 | mA |
| tGT | SCR turn-on time (IT = 60 A, VD = 800 V, IG = 100 mA, dIG/dt = 0.2 A/s, Tj = 25 C) | Typ. 1 | s |
| tQ | SCR turn-off time (IT = 38 A, VD = 800 V, dIT/dt = 10 A/s, VR = 75 V, dVD/dt = 20 V/s, tp = 100 s, Tj = 150 C) | Typ. 150 | s |
| dV/dt | Static dV/dt immunity (VD = 800 V, gate open, Tj = 150 C) | Min. 1000 | V/s |
| VTM | On-state voltage drop (ITM = 60 A, tP = 380 s, Tj = 25 C) | Max. 1.3 | V |
| VTM | On-state voltage drop (ITM = 60 A, tP = 380 s, Tj = 150 C) | Max. 1.3 | V |
| VTOT | SCR on-state threshold voltage (Tj = 150 C) | Max. 0.8 | V |
| RDT | SCR on-state dynamic resistance (Tj = 150 C) | Max. 7.35 | m |
| IDRMT/IRRMT | Repetitive leakage current (VD = VDRM, VR = VRRM, Tj = 25 C) | Max. 5 | A |
| IDRMT/IRRMT | Repetitive leakage current (VD = VDRM, VR = VRRM, Tj = 150 C) | Max. 7.5 | mA |
| IDSMT/IRSMT | Non repetitive leakage current (VD = VDSM, VR = VRSM, Tj = 25 C) | Max. 10 | A |
| Rth(j-c) | Junction to case thermal resistance (DC, per SCR) | Max. 0.75 | C/W |
2411280111_ST-STTN6050H-12M1Y_C3614725.pdf
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