N P Channel MOSFET Slkor SLP170C04D Featuring Low Gate Charge and High Cell Density Trench Technology
Key Attributes
Model Number:
SLP170C04D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
10A;8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
53mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
1.5V;1.6V
Reverse Transfer Capacitance (Crss@Vds):
55pF;68pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
620pF@20V;850pF@20V
Pd - Power Dissipation:
2W;3.2W
Gate Charge(Qg):
12nC@8V
Mfr. Part #:
SLP170C04D
Package:
SOP-8
Product Description
Product Overview
This N+P Channel MOSFET utilizes advanced trench technology and design to provide excellent RDS(on) with low gate charge. It is suitable for a wide variety of applications. Key features include low gate charge, green device availability, advanced high cell density trench technology for ultra-low RDS(ON), and an excellent package for good heat dissipation.
Product Attributes
- Brand: SLKORmicro
- Model: SLP170C04D
- Package: SOP-8
Technical Specifications
| Parameter | N-Channel (Typical) | P-Channel (Typical) | Units |
|---|---|---|---|
| VDS (Drain-Source Voltage) | 40 | -40 | V |
| VGS (Gate-Source Voltage) | 20 | V | |
| ID (Continuous Drain Current, TA=25) | 10 | -8 | A |
| ID (Continuous Drain Current, TA=100) | 6.5 | -5.0 | A |
| IDM (Pulsed Drain Current) | 35 | -28 | A |
| EAS (Single Pulsed Avalanche Energy) | 13 | 17.6 | mJ |
| PD (Power Dissipation, TA=25) | 2.0 | 3.2 | W |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | -55 to +150 | ||
| RJA (Thermal Resistance, Junction to Ambient) | 62.5 | 39 | /W |
| BVDSS (Drain-Source Breakdown Voltage) | 40 | -40 | V |
| IDSS (Zero Gate Voltage Drain Current) | 1 (Max @ VGS=0V, VDS=40V) | A | |
| IGSS (Gate-Source Leakage Current) | 100 (Max @ VGS=20V, VDS=0A) | nA | |
| VGS(th) (Gate-Source Threshold Voltage) | 1.5 (Typ @ ID=250A) | -1.6 (Typ @ ID=250A) | V |
| RDS(ON) (Drain-Source On Resistance, VGS=10V, ID=10A) | 22 (Max) | - | m |
| RDS(ON) (Drain-Source On Resistance, VGS=-10V, ID=-8A) | - | 53 (Max) | m |
| Ciss (Input Capacitance) | 620 (Typ @ VDS=20V, f=1MHz) | 850 (Typ @ VDS=-20V, f=1MHz) | pF |
| Coss (Output Capacitance) | 65 (Typ) | 85 (Typ) | pF |
| Crss (Reverse Transfer Capacitance) | 55 (Typ) | 68 (Typ) | pF |
| Qg (Gate Charge, N-CH: VGS=8V, VDS=20V, ID=10A; P-CH: VGS=-10V, VDS=-20V, ID=-6A) | 12 (Typ) | 13 (Typ) | nC |
| td(on) (Turn-On Delay Time) | 4 (Typ) | 7.5 (Typ) | ns |
| tr (Rise Time) | 3 (Typ) | 5.5 (Typ) | ns |
| td(off) (Turn-Off Delay Time) | 15 (Typ) | 19 (Typ) | ns |
| tf (Fall Time) | 2 (Typ) | 7 (Typ) | ns |
| VSD (Source-Drain Diode Forward Voltage, IS=8A / IS=-6A) | 1.2 (Max) | -1.2 (Max) | V |
2303300930_Slkor-SLP170C04D_C5375299.pdf
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