Power Conversion Slkor SL2328A N Channel Enhancement Mode Field Effect Transistor with Trench Power MV MOSFET

Key Attributes
Model Number: SL2328A
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
350mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF
Number:
1 N-channel
Output Capacitance(Coss):
31pF
Input Capacitance(Ciss):
387pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
9.56nC@10V
Mfr. Part #:
SL2328A
Package:
SOT-23
Product Description

Product Overview

The SL2328A is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. It offers excellent heat dissipation, a high-density cell design for low RDS(ON), and is MSL LEVEL 1 compliant. This MOSFET is designed for applications such as DC-DC converters and power management functions.

Product Attributes

  • Brand: SLKormicro (implied by URL)
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: MSL LEVEL 1

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Drain-Source Breakdown VoltageBVDSSVGS= 0V, ID=250A100V
Zero Gate Voltage Drain CurrentIDSSVDS=100V,VGS=0V1A
Gate-Body Leakage CurrentIGSS1VGS= 20V, VDS=0V100nA
Gate-Body Leakage CurrentIGSS2VGS= 10V, VDS=0V50nA
Gate Threshold VoltageVGS(th)VDS= VGS, ID=250A1.11.83.0V
Static Drain-Source On-ResistanceRDS(ON)VGS= 10V, ID=2.0A240310m
Static Drain-Source On-ResistanceRDS(ON)VGS= 4.5V, ID=2.0A250350m
Diode Forward VoltageVSDIS=2A,VGS=0V0.81.2V
Maximum Body-Diode Continuous CurrentIS2.0A
Input CapacitanceCissVDS=10V,VGS=0V,f=1MHZ387pF
Output CapacitanceCossVDS=10V,VGS=0V,f=1MHZpF
Reverse Transfer CapacitanceCrssVDS=10V,VGS=0V,f=1MHZ28pF
Total Gate ChargeQgVGS=10V,VDS=50V,ID=2.0A9.56nC
Gate-Source ChargeQgsVGS=10V,VDS=50V,ID=2.0A1.81
Gate-Drain Charge QgdVGS=10V,VDS=50V,ID=2.0A1.97
Turn-on Delay TimetD(on)VGS=10V,VDD=50V, ID=1.3A,RL=39 RGEN=14ns
Turn-on Rise TimetrVGS=10V,VDD=50V, ID=1.3A,RL=39 RGEN=117.8
Turn-off Delay TimetD(off)VGS=10V,VDD=50V, ID=1.3A,RL=39 RGEN=113.2
Turn-off fall TimetfVGS=10V,VDD=50V, ID=1.3A,RL=39 RGEN=128
Drain-source VoltageVDS100V
Gate-source VoltageVGS20V
Drain Current (TA=25)ID2.0A
Drain Current (TA=70)ID1.6A
Pulsed Drain CurrentIDM8A
Total Power Dissipation (@ TA=25)PD1.2W
Thermal Resistance Junction-to-AmbientRJA105/ W
Junction and Storage Temperature RangeTJ ,TSTG-55+150

2201201800_Slkor-SL2328A_C2965525.pdf

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