Durable VBsemi Elec SQD40031EL GE3-VB P-Channel MOSFET meeting RoHS Directive 2002 95 EC standards
Key Attributes
Model Number:
SQD40031EL_GE3-VB
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
715pF
Number:
1 P-Channel
Output Capacitance(Coss):
1.565nF
Pd - Power Dissipation:
3.75W
Input Capacitance(Ciss):
8nF
Gate Charge(Qg):
240nC@10V
Mfr. Part #:
SQD40031EL_GE3-VB
Package:
TO-252
Product Description
Product Overview
The SQD40031EL_GE3-VB is a P-Channel MOSFET designed for various electronic applications. It offers key features such as low on-state resistance and compliance with the RoHS Directive 2002/95/EC.
Product Attributes
- Brand: VBsemi
- Origin: Taiwan
- Certifications: RoHS Directive 2002/95/EC compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = - 250 A | - | - | -30 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = - 250 A | -1 | - | -3 | V |
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS = 20 V | - | - | 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = - 30 V, VGS = 0 V | - | - | -1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS = - 30 V, VGS = 0 V, TJ = 125 C | - | - | -50 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS = - 30 V, VGS = 0 V, TJ = 175 C | - | - | -250 | A |
| On-State Drain Current | ID(on) | VDS = -5 V, VGS = - 10 V | - | -120 | - | A |
| Drain-Source On-State Resistance | RDS(on) | VGS = - 10 V, ID = - 30 A | - | 0.005 | - | |
| Drain-Source On-State Resistance | RDS(on) | VGS = - 10 V, ID = - 30 A, TJ = 125 C | - | 0.006 | - | |
| Drain-Source On-State Resistance | RDS(on) | VGS = - 10 V, ID = - 30 A, TJ = 175 C | - | 0.008 | - | |
| Drain-Source On-State Resistance | RDS(on) | VGS = - 4.5 V, ID = - 20 A | - | 0.007 | - | |
| Forward Transconductance | gfs | VDS = - 15 V, ID = - 75 A | - | 20 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS = 0 V, VDS = - 25 V, f = 1 MHz | - | 8000 | - | pF |
| Output Capacitance | Coss | VGS = 0 V, VDS = - 25 V, f = 1 MHz | - | 1565 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0 V, VDS = - 25 V, f = 1 MHz | - | 715 | - | pF |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS = - 15 V, VGS = - 10 V, ID = - 75 A | - | 160 | 240 | nC |
| Gate-Source Charge | Qgs | VDS = - 15 V, VGS = - 10 V, ID = - 75 A | - | 32 | - | nC |
| Gate-Drain Charge | Qgd | VDS = - 15 V, VGS = - 10 V, ID = - 75 A | - | 30 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD = - 15 V, RL = 0.2 , ID - 75 A, VGEN = - 10 V, Rg = 2.5 | - | 25 | 40 | ns |
| Rise Time | tr | VDD = - 15 V, RL = 0.2 , ID - 75 A, VGEN = - 10 V, Rg = 2.5 | - | 225 | 360 | ns |
| Turn-Off Delay Time | td(off) | VDD = - 15 V, RL = 0.2 , ID - 75 A, VGEN = - 10 V, Rg = 2.5 | - | 150 | 240 | ns |
| Fall Time | tf | VDD = - 15 V, RL = 0.2 , ID - 75 A, VGEN = - 10 V, Rg = 2.5 | - | 210 | 340 | ns |
| Source-Drain Diode Ratings and Characteristics | ||||||
| Continuous Current | IS | - | - | 80 | A | |
| Pulsed Current | ISM | - | - | 240 | A | |
| Forward Voltage | VSD | IF = - 75 A, VGS = 0 V | - | -1.2 | -1.5 | V |
| Reverse Recovery Time | trr | IF = - 75 A, dI/dt = 100 A/s | - | 55 | - | ns |
| Peak Reverse Recovery Current | IRM(REC) | IF = - 75 A, dI/dt = 100 A/s | - | 2.5 | 5 | A |
| Reverse Recovery Charge | Qrr | IF = - 75 A, dI/dt = 100 A/s | - | 0.07 | 0.25 | C |
| Absolute Maximum Ratings | ||||||
| Gate-Source Voltage | VGS | - | - | 20 | V | |
| Continuous Drain Current (TJ = 175 C) | ID | TC = 25 C | - | -90 | - | A |
| Continuous Drain Current (TJ = 175 C) | ID | TC = 125 C | - | - | -100 | A |
| Pulsed Drain Current | IDM | - | - | -280 | A | |
| Avalanche Current | IAR | - | - | -80 | A | |
| Repetitive Avalanche Energy | EAR | L = 0.1 mH | - | 180 | - | mJ |
| Power Dissipation | PD | TC = 25 C (TO-220AB and TO-263) | - | 187 | - | W |
| Power Dissipation | PD | TA = 25 C (TO-263) | - | 3.75 | - | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 175 | C | |
| Thermal Resistance Ratings | ||||||
| Junction-to-Ambient | RthJA | PCB Mount (TO-263) | - | 40 | - | C/W |
| Junction-to-Ambient | RthJA | Air (TO-220AB) | - | 62.5 | - | C/W |
| Junction-to-Case | RthJC | - | 0.8 | - | C/W | |
2410121822_VBsemi-Elec-SQD40031EL-GE3-VB_C22395899.pdf
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