Power Switching MOSFET N Channel 100 Volt VBsemi Elec IRL540NPBF VB Featuring Trench Power Technology
Key Attributes
Model Number:
IRL540NPBF-VB
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+175℃
RDS(on):
36mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
90pF
Number:
1 N-channel
Output Capacitance(Coss):
270pF
Pd - Power Dissipation:
127W
Input Capacitance(Ciss):
4.5nF
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
IRL540NPBF-VB
Package:
TO-220AB
Product Description
Product Overview
The IRL540NPBF-VB is a N-Channel 100-V (D-S) MOSFET featuring Trench Power MOSFET technology for low thermal resistance and high junction temperature capability. It is designed for various applications requiring efficient power switching.
Product Attributes
- Brand: VBsemi
- Certifications: RoHS Compliant, Halogen-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0 V, ID = 250 A | 100 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 1 | 3 | V | |
| Gate-Body Leakage | IGSS | VGS = 20 V, VDS = 0 V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 100 V, VGS = 0 V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 80 V, VGS = 0 V, TJ = 125 C | 50 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 80 V, VGS = 0 V, TJ = 175 C | 250 | A | ||
| On-State Drain Current | ID(on) | VDS 5 V, VGS = 10 V | 75 | A | ||
| Drain-Source On-State Resistance | rDS(on) | VGS = 10 V, ID = 5 A | 0.036 | |||
| Drain-Source On-State Resistance | rDS(on) | VGS = 4.5 V, ID = 3 A | 0.038 | |||
| Drain-Source On-State Resistance | rDS(on) | VGS = 10 V, ID = 5 A, TJ = 125 C | 0.050 | |||
| Drain-Source On-State Resistance | rDS(on) | VGS = 10 V, ID = 3 A, TJ = 175 C | 0.065 | |||
| Forward Transconductance | gfs | VDS = 15 V, ID = 15 A | 10 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1 MHz | 450 | pF | ||
| Output Capacitance | Coss | VGS = 0 V, VDS = 25 V, f = 1 MHz | 270 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0 V, VDS = 25 V, f = 1 MHz | 90 | pF | ||
| Total Gate Charge | Qg | VDS = 50 V, VGS = 10 V, ID = 40 A | 35 | 60 | nC | |
| Gate-Source Charge | Qgs | VDS = 50 V, VGS = 10 V, ID = 40 A | 11 | nC | ||
| Gate-Drain Charge | Qgd | VDS = 50 V, VGS = 10 V, ID = 40 A | 9 | nC | ||
| Gate Resistance | RG | 1.7 | ||||
| Turn-On Delay Time | td(on) | VDD = 50 V, RL = 1.25 , ID 40 A, VGEN = 10 V, RG = 2.5 | 11 | 20 | ns | |
| Rise Time | tr | VDD = 50 V, RL = 1.25 , ID 40 A, VGEN = 10 V, RG = 2.5 | 12 | 20 | ns | |
| Turn-Off Delay Time | td(off) | VDD = 50 V, RL = 1.25 , ID 40 A, VGEN = 10 V, RG = 2.5 | 30 | 45 | ns | |
| Fall Time | tf | VDD = 50 V, RL = 1.25 , ID 40 A, VGEN = 10 V, RG = 2.5 | 12 | 20 | ns | |
| Source-Drain Diode Ratings and Characteristics | ||||||
| Continuous Current | Is | 40 | A | |||
| Pulsed Current | ISM | 120 | A | |||
| Forward Voltage | VSD | IF = 30 A, VGS = 0 V | 1.0 | 1.5 | V | |
| Reverse Recovery Time | trr | IF = 30 A, di/dt = 100 A/s | 60 | ns | ||
| Peak Reverse Recovery Current | IRM(REC) | IF = 30 A, di/dt = 100 A/s | 5 | 8 | A | |
| Reverse Recovery Charge | Qrr | IF = 30 A, di/dt = 100 A/s | 0.15 | 0.4 | C | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC = 25 C (TJ = 175 C) | 55 | A | ||
| Continuous Drain Current | ID | TC = 125 C (TJ = 175 C) | 40 | A | ||
| Pulsed Drain Current | IDM | 135 | A | |||
| Avalanche Current | IAR | 35 | A | |||
| Repetitive Avalanche Energy | EAR | L = 0.1 mH | 61 | mJ | ||
| Maximum Power Dissipation | PD | TC = 25 C | 127 | W | ||
| Maximum Power Dissipation | PD | TA = 25 C | 3.75 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | C | ||
| Thermal Resistance Ratings | ||||||
| Junction-to-Ambient | RthJA | (PCB Mount) | 40 | C/W | ||
| Junction-to-Case (Drain) | RthJC | 1.4 | C/W | |||
2504180925_VBsemi-Elec-IRL540NPBF-VB_C5240567.pdf
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