VBsemi Elec SUD50P08 25L E3 VB Low On Resistance P Channel Trench Power MOSFET for Power Management
Key Attributes
Model Number:
SUD50P08-25L-E3-VB
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
12.5A
Operating Temperature -:
-55℃~+175℃
RDS(on):
17mΩ@10V,12.5A
Gate Threshold Voltage (Vgs(th)):
1V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
235pF
Number:
1 P-Channel
Output Capacitance(Coss):
320pF
Input Capacitance(Ciss):
4.7nF@50V
Pd - Power Dissipation:
95W
Gate Charge(Qg):
55nC@10V
Mfr. Part #:
SUD50P08-25L-E3-VB
Package:
TO-252
Product Description
Product Overview
The SUD50P08-25L-E3-VB is a P-Channel Trench Power MOSFET designed for high-efficiency applications. It offers low on-resistance and robust performance, making it suitable for various power management solutions.
Product Attributes
- Brand: VBsemi
- Certifications: RoHS COMPLIANT
- Origin: Taiwan
Technical Specifications
| Model | VDS (V) | rDS(on) () | ID (A) | Qg (Typ) (nC) | Package |
| SUD50P08-25L-E3-VB | -100 | 0.017 at VGS = -10 V | -50 (Package limited) | 55 | TO-252 |
| SUD50P08-25L-E3-VB | -100 | 0.021 at VGS = -4.5 V | -47 (Package limited) | 55 | TO-252 |
2504180925_VBsemi-Elec-SUD50P08-25L-E3-VB_C4355071.pdf
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