Dual P Channel Trench Power MOSFET VBsemi Elec DMP4025LSD VB for Load Switching Applications in PCs

Key Attributes
Model Number: DMP4025LSD-VB
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
21mΩ@10V;28mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
135pF
Number:
2 P-Channel
Output Capacitance(Coss):
215pF
Input Capacitance(Ciss):
1.35nF
Pd - Power Dissipation:
5W
Gate Charge(Qg):
32nC@10V;15nC@4.5V
Mfr. Part #:
DMP4025LSD-VB
Package:
SO-8
Product Description

Product Overview

The DMP4025LSD-VB is a Dual P-Channel Trench Power MOSFET designed for load switching applications in notebook PCs, desktop PCs, and game stations. It features a 30V Drain-Source voltage and a low on-resistance of 0.028 at VGS = -4.5V. This MOSFET is 100% UIS tested and Halogen-free.

Product Attributes

  • Brand: VBsemi
  • Part Number: DMP4025LSD-VB
  • Channel Type: Dual P-Channel
  • Certifications: Halogen-free, RoHS Compliant

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Drain-Source Breakdown VoltageVDSVGS = 0 V, ID = -250 A-30V
Gate-Source Threshold VoltageVGS(th)VDS = VGS, ID = -250 A-1.0--3.0V
Zero Gate Voltage Drain CurrentIDSSVDS = -30 V, VGS = 0 V-1A
On-State Drain CurrentID(on)VDS -10 V, VGS = -10 V-30A
Drain-Source On-State ResistanceRDS(on)VGS = -10 V, ID = -7.3 A0.0200.021
Drain-Source On-State ResistanceRDS(on)VGS = -4.5 V, ID = -6.2 A0.028
Total Gate ChargeQgVDS = -15 V, VGS = -10 V, ID = -9.1 A3250nC
Continuous Source-Drain Diode CurrentISTC = 25 C-4.1A
Body Diode Forward VoltageVSDIS = -2 A, VGS = 0 V-0.75--1.2V
Body Diode Reverse Recovery TimetrrIS = -2 A, dI/dt = 100 A/s, TJ = 25 C3460ns
Body Diode Reverse Recovery ChargeQrrIS = -2 A, dI/dt = 100 A/s, TJ = 25 C2240nC

2504171620_VBsemi-Elec-DMP4025LSD-VB_C725015.pdf

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