Suzhou GoodArk Elec GSBC81725 Transistor Ideal for Switching and Power Amplification Applications

Key Attributes
Model Number: GSBC817-25
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
700mV@500mA,50mA
Pd - Power Dissipation:
250mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
GSBC817-25
Package:
SOT-23
Product Description

Product Overview

The GSBC817 is an NPN transistor designed for switching applications and general power amplification. It comes in a compact SOT-23 plastic package and is RoHS compliant.

Product Attributes

  • Brand: GSBC (implied from datasheet)
  • Package: SOT-23
  • Certifications: RoHS compliant

Technical Specifications

ModelhFE RangeMarkingVCBO (V)VCEO (V)VEBO (V)IC (mA)ICM (A)PC (mW)TJ (C)TSTG (C)VCBO Breakdown (V)VCEO Breakdown (V)VEBO Breakdown (V)ICBO (A)IEBO (A)hFE(1)hFE(2)VCE(sat) (V)VBE (V)fT (MHz)COB (pF)
GSBC817-16100 to 2506B50455.05001.0250-55 to +150-55 to +15050455.00.10.1100-600 (VCE=1.0V, IC=100mA)40 (VCE=1.0V, IC=500mA)0.7 (IB=50mA)1.2 (VCE=1.0V, IC=500mA)100 (VCE=5.0V, IC=10mA)5.0 (VCB=10V, IE=0, f=1.0MHz)
GSBC817-25160 to 4006A50455.05001.0250-55 to +150-55 to +15050455.00.10.1100-600 (VCE=1.0V, IC=100mA)40 (VCE=1.0V, IC=500mA)0.7 (IB=50mA)1.2 (VCE=1.0V, IC=500mA)100 (VCE=5.0V, IC=10mA)5.0 (VCB=10V, IE=0, f=1.0MHz)
GSBC817-40250 to 6006C50455.05001.0250-55 to +150-55 to +15050455.00.10.1100-600 (VCE=1.0V, IC=100mA)40 (VCE=1.0V, IC=500mA)0.7 (IB=50mA)1.2 (VCE=1.0V, IC=500mA)100 (VCE=5.0V, IC=10mA)5.0 (VCB=10V, IE=0, f=1.0MHz)

2411201841_Suzhou-Good-Ark-Elec-GSBC817-25_C19841084.pdf

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