Power MOSFET VBsemi Elec VBA3310 Dual N Channel 30 Volt Trench Device for Notebook CPU Core Switching
Key Attributes
Model Number:
VBA3310
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
13.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
73pF
Number:
1 N-channel
Output Capacitance(Coss):
175pF
Input Capacitance(Ciss):
641pF
Pd - Power Dissipation:
2.1W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
VBA3310
Package:
SO-8
Product Description
Product Overview
The VBA3310 is a dual N-Channel 30-V (D-S) Trench Power MOSFET optimized for high-side synchronous rectifier operation. It features low on-resistance, high efficiency, and is 100% Rg and UIS tested, making it ideal for notebook CPU core applications as a high-side switch.
Product Attributes
- Brand: VBsemi
- Certifications: Halogen-free
- Package Type: SO-8
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 A | 30 | V | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 1.2 | 2.5 | V | |
| Gate-Source Leakage | IGSS | VDS = 0 V, VGS = 20 V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 30 V, VGS = 0 V | 1 | A | ||
| On-State Drain Current | ID(on) | VDS 5 V, VGS = 10 V | 20 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 10 A | 0.010 | |||
| Drain-Source On-State Resistance | RDS(on) | VGS = 4.5 V, ID = 9 A | 0.012 | |||
| Forward Transconductance | gfs | VDS = 15 V, ID = 10 A | 52 | S | ||
| Input Capacitance | Ciss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 641 | pF | ||
| Output Capacitance | Coss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 175 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 73 | pF | ||
| Total Gate Charge | Qg | VDS = 15 V, VGS = 10 V, ID = 10 A | 15 | 23 | nC | |
| Total Gate Charge | Qg | VDS = 15 V, VGS = 5 V, ID = 10 A | 6.8 | 10.2 | nC | |
| Gate Resistance | Rg | f = 1 MHz | 0.36 | 1.8 | ||
| Turn-On Delay Time | td(on) | VDD = 15 V, RL = 1.4 , ID 9 A, VGEN = 4.5 V, Rg = 1 | 16 | 24 | ns | |
| Rise Time | tr | VDD = 15 V, RL = 1.4 , ID 9 A, VGEN = 4.5 V, Rg = 1 | 12 | 18 | ns | |
| Turn-Off Delay Time | td(off) | VDD = 15 V, RL = 1.4 , ID 9 A, VGEN = 4.5 V, Rg = 1 | 16 | 24 | ns | |
| Fall Time | tf | VDD = 15 V, RL = 1.4 , ID 9 A, VGEN = 4.5 V, Rg = 1 | 10 | 20 | ns | |
| Body Diode Voltage | VSD | IS = 9 A | 0.8 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF = 9 A, dI/dt = 100 A/s, TJ = 25 C | 15 | 30 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF = 9 A, dI/dt = 100 A/s, TJ = 25 C | 6 | 12 | nC |
2504180926_VBsemi-Elec-VBA3310_C480930.pdf
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