86--136 6733 2386
quality 650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge and Avalanche Energy Rating factory
quality 650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge and Avalanche Energy Rating factory

650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge and Avalanche Energy Rating

Key Attributes
Model Number: VBP165I80
Product Custom Attributes
Mfr. Part #:
VBP165I80
Package:
TO-247
Product Description

Product Overview

The VBP165I80 is a 650V Trench and Fieldstop IGBT designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply applications. Key features include a maximum junction temperature of 175C and avalanche energy rating (UIS). This IGBT is ideal for use in telecommunications, lighting, consumer electronics, industrial equipment, and renewable energy systems, including server and telecom power supplies, HID lighting, fluorescent ballast lighting, ATX power supplies, welding, battery chargers, solar inverters, and switch-mode power supplies (SMPS).

Product Attributes

  • Brand: VBsemi
  • Model: VBP165I80
  • Package Type: TO-247
  • Certifications: RoHS compliant, Halogen-free

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Collector-Emitter Voltage VCE 650 V
Gate-Emitter Voltage VGE 20 V
Continuous Collector Current IC TC=25 160 A
Continuous Collector Current IC TC=100 80 A
Pulsed Collector Current ICM 240 A
Maximum Power Dissipation PD TC = 25 C 510 W
Maximum Power Dissipation PD TC = 100 C 260 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 +175 C
Short Circuit Withstand Time tSC VGE= 15V, VCE400V, TC=150 3 s
Short Circuit Withstand Time tSC VGE= 15V, VCE330V, TC=100 5 s
Soldering Recommendations (Peak Temperature) for 10 s 260 C
Collector-Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A 650 V
Gate-Source Threshold Voltage VGE(th) VCE = VGE, ID = 250 A 4 5 6 V
Zero Gate Voltage Collector Current ICES VCE = 650 V,VGE = 0 V,TJ = 25 C 1 20 A
Zero Gate Voltage Collector Current ICES VCE = 650 V,VGE = 0 V,TJ = 150 C 1000 A
Gate-Emitter Leakage Current IGES VCE = 0 V, VGS = 20 V 100 nA
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15 V, IC = 80 A 1.42 1.7 V
Forward Transconductance gfs VCE = 20 V, IC = 80 A 40 S
Input Capacitance Cies VGE = 0 V, VCE = 25 V, f = 500 KHz 8400 pF
Output Capacitance Coes 230 pF
Reverse Transfer Capacitance Cres 80 pF
Total Gate Charge Qg IC = 80 A, VCE = 400 V, VGE = 15 V 196 nC
Gate-Emitter Charge Qge 21 nC
Gate to Collector Charge Qgc 23 nC
Turn-On Delay Time td(on) VCE = 400 V , VGE = 0 /15V, IC = 80 A, Rg = 10 80 ns
Rise Time tr 75 ns
Turn-Off Delay Time td(off) 95 ns
Fall Time tf 35 ns
Internal emitter inductance LE measured 5 mm 13 nH
Diode Forward Current IF 80 A
Pulsed Diode Forward Current IFM 240 A
Diode Forward Voltage VF IF = 80 A 2.1 2.5 V
Reverse Recovery Time trr TJ = 25 C, IF = 80 A, dIF/dt = 200 A/s, VR = 400 V 90 ns
Reverse Recovery Charge Qrr 0.15 C
Reverse Recovery Current IRRM 1 5 A
Maximum Junction-to-Ambient Thermal Resistance RthJA 40 C/W
Maximum Junction-to-Case Thermal Resistance RthJC 0.5 C/W

2412131800_VBsemi-Elec-VBP165I80_C42412805.pdf

Related Products
quality Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic factory
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
quality Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version factory
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
quality YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies factory
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
quality Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device factory
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.