High Voltage Power MOSFET Suzhou Good-Ark Elec SSFH6538 650V N-Channel Low On Resistance Component
Key Attributes
Model Number:
SSFH6538
Product Custom Attributes
Current - Continuous Drain(Id):
38A
Operating Temperature -:
-55℃~+150℃
RDS(on):
66mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
-
Pd - Power Dissipation:
322W
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
3.2nF
Gate Charge(Qg):
55nC
Mfr. Part #:
SSFH6538
Package:
TO-220-3
Product Description
Product Overview
The SSFH6538 is a 650V N-Channel MOSFET designed with advanced MOSFET process technology for high cell density and low on-resistance. It offers ideal performance for battery-operated systems, load switching, power converters, and other general-purpose applications. Key benefits include low on-resistance, low gate charge, and fast switching with rapid reverse body recovery, making it highly efficient and reliable for high-efficiency switch mode power supplies and a wide range of other applications.
Product Attributes
- Brand: Goodarksemi (implied by domain name)
- Technology: Advanced MOSFET process
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Main Product Characteristics | ||||||
| Drain-Source Voltage | V(BR)DSS | 650 | V | |||
| On-Resistance | RDS(ON) | 89 | 99 | m | ||
| Absolute Maximum Ratings and Thermal Characteristics | ||||||
| Drain-Source Voltage | VDS | (VGS=0V | 650 | V | ||
| Gate-Source Voltage | VGS | (VDS=0V) AC (f>1 Hz) | 30 | V | ||
| Continuous Drain Current | ID (DC) | at Tc=25C | 38 | A | ||
| Continuous Drain Current | ID (DC) | at Tc=100C | 24 | A | ||
| Pulsed Drain Current | IDM (pluse) | 152 | A | |||
| Maximum Power Dissipation | PD | (Tc=25C) | 322 | W | ||
| Derate above 25C | 2.58 | W/C | ||||
| Single Pulse Avalanche Energy | EAS | 841 | mJ | |||
| Avalanche Current | IAR | 7 | A | |||
| Repetitive Avalanche Energy, tAR Limited by TJMAX | EAR | 3.9 | mJ | |||
| Drain Source Voltage Slope | VDS480V, dv/dt | 50 | V/nS | |||
| Reverse Diode dv/dt | VDS480V, ISD<ID dv/dt | 50 | V/nS | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | +150 | C | ||
| Thermal Resistance, Junction-to-Case (Maximum) | RJC | 0.39 | C /W | |||
| Thermal Resistance, Junction-to-Ambient (Maximum) | RJA | 62 | C /W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=500A | 650 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V, VGS=0V, Tc=25C | -- | -- | 3 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V, VGS=0V, Tc=125C | -- | -- | 100 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 3 | 3.5 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=19A | -- | 89 | 99 | m |
| Input Capacitance | Clss | VDS=50V, VGS=0V, F=1.0MHz | -- | 2800 | 3200 | pF |
| Output Capacitance | Coss | -- | 97 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 1.5 | -- | pF | |
| Total Gate Charge | Qg | VDD=380V, ID=19A, RG=1.7, VGS=10V | -- | 45 | 55 | nC |
| Gate-Source Charge | Qgs | -- | 15 | -- | nC | |
| Gate-Drain Charge | Qg | -- | 11.5 | -- | nC | |
| On/off States Dynamic Characteristics | ||||||
| Turn-on Delay Time | td(on) | -- | 16 | -- | nS | |
| Turn-on Rise Time | tr | -- | 13 | -- | nS | |
| Turn-Off Delay Time | td(off) | -- | 71 | -- | nS | |
| Turn-Off Fall Time | tf | -- | 13 | -- | nS | |
| Source- Drain Diode Characteristics | ||||||
| Source-drain Current (Body Diode) | ISD | -- | -- | 38 | A | |
| Pulsed Source-drain Current (Body Diode) | ISDM | -- | -- | 152 | A | |
| Forward On Voltage | VSD | TJ=25C, ISD=28A, VGS=0V | -- | 0.9 | 1.2 | V |
| Reverse Recovery Time | trr | TJ=25C, IF=19A, di/dt=100A/S | -- | 180 | -- | nS |
| Reverse Recovery Charge | Qrr | -- | 1.6 | -- | uC | |
| Peak Reverse Recovery Current | Irrm | -- | 18 | -- | A | |
| Package Outline Dimensions | ||||||
| Package Type | Min | Max | Min | Max | ||
| Dimensions In Millimeters | Dimensions In Inches | |||||
| A | 4.400 | 4.600 | 0.173 | 0.181 | ||
| A1 | 2.250 | 2.550 | 0.089 | 0.100 | ||
| b | 0.710 | 0.910 | 0.028 | 0.036 | ||
| b1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| c | 0.330 | 0.650 | 0.013 | 0.026 | ||
| c1 | 1.200 | 1.400 | 0.047 | 0.055 | ||
| D | 9.910 | 10.250 | 0.390 | 0.404 | ||
| E | 8.9500 | 9.750 | 0.352 | 0.384 | ||
| E1 | 12.650 | 12.950 | 0.498 | 0.510 | ||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 | ||
| F | 2.650 | 2.950 | 0.104 | 0.116 | ||
| H | 7.900 | 8.100 | 0.311 | 0.319 | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 | ||
| L | 12.900 | 13.400 | 0.508 | 0.528 | ||
| L1 | 2.850 | 3.250 | 0.112 | 0.128 | ||
| V | 7.500 REF. | 0.295 REF. | ||||
| 3.400 | 3.800 | 0.134 | 0.150 | |||
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. TJ=25C, VDD=50V, VG=10V, RG=25.
2411201841_Suzhou-Good-Ark-Elec-SSFH6538_C19841889.pdf
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