650V 15A Trench Field Stop IGBT with Soft Current Turn Off Waveforms SPTECH SPT15N65T1 Low Saturation Voltage
Key Attributes
Model Number:
SPT15N65T1
Product Custom Attributes
Pd - Power Dissipation:
27W
Td(off):
60ns
Td(on):
15ns
Operating Temperature:
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
1.91nF@25V
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.1V@250uA
Gate Charge(Qg):
92nC@15V
Reverse Recovery Time(trr):
50ns
Switching Energy(Eoff):
100uJ
Turn-On Energy (Eon):
750uJ
Mfr. Part #:
SPT15N65T1
Package:
TO-220MF
Product Description
Product Overview
The SPT15N65T1 is a 650V / 15A Trench Field Stop IGBT designed for high-reliability applications. It features a maximum junction temperature of 150C, a high breakdown voltage of 650V, and a very low saturation voltage of 1.65V (Typ.) at 15A. The device also offers soft current turn-off waveforms, making it suitable for soft switching applications, air conditioning, and motor drive inverters.
Product Attributes
- Brand: SPT (implied from product code)
- Package: TO-220MF
- Packaging: Tube
- Website: http://www.zhichaowei.com/
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| IGBT Features | ||||
| Max Junction Temperature | Tjmax | 150 | C | |
| High breakdown voltage | VCE | 650 | V | |
| Short Circuit Rated | - | - | - | |
| Very Low Saturation Voltage | VCE(SAT) | 1.65 | V | IC = 15A (Typ.) |
| Soft current turn-off waveforms | - | - | - | |
| Maximum Ratings | ||||
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | Tj= 25 |
| DC collector current | IC | 30 / 15 | A | TC = 25C / 100C |
| Diode Forward current | IF | 30 / 15 | A | TC = 25C / 100C |
| Continuous Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | VGE | 30 | V | |
| Turn off safe operating area | - | -60 | A | VCE 650V, Tj 150C |
| Pulsed collector current | ICM | 45 | A | VGE=15V, tp limited by Tjmax |
| Short Circuit Withstand Time | Tsc | 5 | s | VGE= 15V, VCE 400V |
| Power dissipation | Ptot | 27 | W | Tj=25 |
| Operating junction temperature | Tj | -40...+150 | C | |
| Storage temperature | Ts | -55...+150 | C | |
| Soldering temperature, wave soldering | - | 260 | C | 1.6mm from case for 10s |
| Thermal Resistance | ||||
| IGBT thermal resistance, junction - case | R(j-c) | 4.9 | K/W | |
| Diode thermal resistance, junction - case | R(j-c) | 5.8 | K/W | |
| Thermal resistance, junction - ambient | R(j-a) | 62.5 | K/W | |
| Electrical Characteristics (IGBT) | ||||
| Collector to Emitter Breakdown Voltage | BVCES | 650 | V | VGE = 0V, IC = 1mA |
| Collector to Emitter Saturation Voltage | VCE(SAT) | 1.65 / 1.95 | V | IC = 15A, VGE = 15V (Typ. / Max.) |
| G-E Threshold Voltage | VGE(th) | 4.1 / 5.0 / 5.7 | V | VGE = VCE, IC = 250A (Min. / Typ. / Max.) |
| Collector Cut-Off Current | ICES | 10 | A | VCE = 650V, VGE = 0V (Max.) |
| G-E Leakage Current | IGES | 200 | nA | VGE = 20V, VCE = 0V (Max.) |
| Transconductance | gfs | 10 | S | VCE=20V, IC=15A (Typ.) |
| Dynamic Characteristics (IGBT) | ||||
| Input capacitance | Cies | 1910 | pF | VCE = 25V, VGE = 0V, f = 1MHz (Typ.) |
| Output capacitance | Coes | 80 | pF | VCE = 25V, VGE = 0V, f = 1MHz (Typ.) |
| Reverse transfer capacitance | Cres | 46 | pF | VCE = 25V, VGE = 0V, f = 1MHz (Typ.) |
| Gate charge | QG | 92 | nC | VCC = 480V, IC = 15A, VGE = 15V (Typ.) |
| Short circuit collector current | ICSC | 98 | A | VGE=15V,tSC5us, VCC=400V, Tjstart=25C (Typ.) |
| Switching Characteristics (IGBT) | ||||
| Turn-on Delay Time | td(on) | 15 | ns | VCC = 400V, IC = 15A, VGE = 0/15V, Rg=12 (Typ.) |
| Rise Time | tr | 25 | ns | VCC = 400V, IC = 15A, VGE = 0/15V, Rg=12 (Typ.) |
| Turn-off Delay Time | td(off) | 60 | ns | VCC = 400V, IC = 15A, VGE = 0/15V, Rg=12 (Typ.) |
| Fall Time | tf | 46 | ns | VCC = 400V, IC = 15A, VGE = 0/15V, Rg=12 (Typ.) |
| Turn-on Energy | Eon | 0.75 | mJ | VCC = 400V, IC = 15A, VGE = 0/15V, Rg=12 (Typ.) |
| Turn-off Energy | Eoff | 0.1 | mJ | VCC = 400V, IC = 15A, VGE = 0/15V, Rg=12 (Typ.) |
| Electrical Characteristics (DIODE) | ||||
| Diode Forward Voltage | VFM | 1.7 | V | IF = 15A (Typ.) |
| Reverse Recovery Time | Trr | 50 | ns | IF= 15A, VR = 300V, di/dt =200A/s (Typ.) |
| Reverse Recovery Current | Irr | 4 | A | IF= 15A, VR = 300V, di/dt =200A/s (Typ.) |
| Reverse Recovery Charge | Qrr | 83 | nC | IF= 15A, VR = 300V, di/dt =200A/s (Typ.) |
2505231205_SPTECH-SPT15N65T1_C480175.pdf
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