VISHAY GBU4D E3 51 Glass Passivated Single Phase Bridge Rectifier for AC DC Full Wave Rectification

Key Attributes
Model Number: GBU4D-E3/51
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1V@4A
Current - Rectified:
4A
Voltage - DC Reverse(Vr):
200V
Mfr. Part #:
GBU4D-E3/51
Package:
GBU
Product Description

Vishay GBU Series Glass Passivated Single-Phase Bridge Rectifier

The GBU series bridge rectifiers are designed for general-purpose AC/DC full-wave rectification. They are ideal for applications such as monitors, TVs, printers, switching mode power supplies, adapters, audio equipment, and home appliances. Key features include high surge current capability, high case dielectric strength, and suitability for printed circuit boards. These rectifiers are available in RoHS-compliant and halogen-free versions.

Product Attributes

  • Brand: Vishay General Semiconductor
  • Certifications: UL recognition file number E54214
  • Material: Molding compound meets UL 94 V-0 flammability rating; Matte tin plated leads
  • Compliance: RoHS-compliant (E3 suffix), Halogen-free (M3 suffix)

Technical Specifications

Parameter Symbol GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M Unit
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified output current at TC = 100 C (1) IF(AV) 4.0 A
Maximum average forward rectified output current at TA = 40 C (2) IF(AV) 3.0 A
Peak forward surge current single sine-wave superimposed on rated load IFSM 150 A
Rating for fusing (t < 8.3 ms) I2t 93 As
Operating junction and storage temperature range TJ, TSTG -55 to +150 C
Maximum instantaneous forward voltage drop per diode at IF = 4.0 A VF 1.0 V
Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 C IR 5.0 A
Maximum DC reverse current at rated DC blocking voltage per diode TA = 125 C IR 500 A
Typical junction capacitance per diode at 4 V, 1 MHz CJ 57 pF
Typical thermal resistance (Heatsink Mounting) RJC 4.2 C/W
Typical thermal resistance (Free Air Mounting) RJA 22 C/W

2410121810_VISHAY-GBU4D-E3-51_C3009129.pdf

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