electronic component Taiwan Semiconductor SFAS801G MNG glass passivated junction super fast rectifier

Key Attributes
Model Number: SFAS801G MNG
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
125A
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
50V
Diode Configuration:
Independent
Reverse Leakage Current (Ir):
10uA@50V
Voltage - Forward(Vf@If):
950mV@8A
Current - Rectified:
8A
Mfr. Part #:
SFAS801G MNG
Package:
D2PAK
Product Description

Product Overview

The SFAS801G - SFAS808G series are high-efficiency, glass-passivated junction surface mount super fast rectifiers from Taiwan Semiconductor. Designed for automated placement, these devices offer low forward voltage (VF), high surge current capability, and low power loss. They are ideal for various electronic applications requiring fast switching and reliable performance. The series is halogen-free and meets stringent quality and environmental standards.

Product Attributes

  • Brand: Taiwan Semiconductor
  • Series: SFAS801G - SFAS808G
  • Construction: Glass passivated junction chip
  • Placement: Ideal for automated placement
  • Material: Halogen-free compound (IEC 61249-2-21), UL flammability classification rating 94V-0
  • Terminal Finish: Matte tin plated leads, solderable per JESD22-B102
  • Whisker Test: Meet JESD 201 class 2
  • Moisture Sensitivity Level: Level 1, per J-STD-020
  • Certifications: AEC-Q101 qualified (with suffix "H"), Compliant to RoHS Directive 2011/65/EU and WEEE 2002/96/EC
  • Packing: Green compound (halogen-free) available (with suffix "G"), Packing codes available for 13" Paper reel (MN) and 13" Plastic reel (D2PAK)
  • Package: TO-263AB (D2PAK)
  • Weight: 1.33 g (approximately)
  • Marking: Specific device code, Green Compound, Date Code, Factory Code

Technical Specifications

ParameterSymbolSFAS801GSFAS802GSFAS803GSFAS804GSFAS805GSFAS806GSFAS807GSFAS808GUnit
Maximum repetitive peak reverse voltageVRRM50100150200300400500600V
Maximum RMS voltageVRMS3570105140210280350420V
Maximum DC blocking voltageVDC50100150200300400500600V
Maximum average forward rectified currentIF(AV)8A
Peak forward surge current, 8.3 ms single half sine-waveIFSM125A
Maximum reverse recovery time (Note 1)trr35ns
Maximum instantaneous forward voltage @ IF= 8 AVF0.95V
Maximum reverse current @ rated VR TJ=25CIR10A
Maximum reverse current @ rated VR TJ=100CIR400A
Typical junction capacitance (Note 2)CJ40pF
Typical thermal resistanceRJC2.2C/W
Operating junction temperature rangeTJ - 55 to +150C
Storage temperature rangeTSTG - 55 to +150C

2304140030_Taiwan-Semiconductor-SFAS801G-MNG_C485053.pdf

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