Phase Control Thyristors with Center Amplifying Gate VISHAY VS-ST180C20C0 in A-PUK TO-200AB Package
Key Attributes
Model Number:
VS-ST180C20C0
Product Custom Attributes
Holding Current (Ih):
600mA
Current - Gate Trigger(Igt):
150mA
Voltage - On State(Vtm):
1.96V
Current - On State(It(RMS)):
660A
Peak Off - State Voltage(Vdrm):
2kV
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
3V
Mfr. Part #:
VS-ST180C20C0
Package:
TO-200AB
Product Description
Product Overview
The Vishay Semiconductors VS-ST180C Series are Phase Control Thyristors featuring a center amplifying gate and a metal case with a ceramic insulator. Designed and qualified for industrial levels, these thyristors are housed in the international standard A-PUK (TO-200AB) package. They are ideal for applications such as DC motor controls, controlled DC power supplies, and AC controllers.
Product Attributes
- Brand: Vishay Semiconductors
- Case Style: A-PUK (TO-200AB)
- Material Categorization: For definitions of compliance please see www.vishay.com/doc?99912
Technical Specifications
| Parameter | Test Conditions | Values | Units | ||
|---|---|---|---|---|---|
| Primary Characteristics | |||||
| IT(AV) | 350 | A | |||
| VDRM/VRRM | 400, 800, 1200, 1600, 1800, 2000 | V | |||
| VTM | 1.96 | V | |||
| IGT | 90 | mA | |||
| TJ | -40 to +125 | C | |||
| Package | A-PUK (TO-200AB) | ||||
| Circuit configuration | Single SCR | ||||
| Major Ratings and Characteristics | |||||
| IT(AV) | Ths = 55 C | 350 | A | ||
| IT(RMS) | Ths = 25 C | 660 | A | ||
| ITSM (50 Hz) | 5000 | A | |||
| ITSM (60 Hz) | 5230 | A | |||
| I2t (50 Hz) | 125 | kAs | |||
| I2t (60 Hz) | 114 | kAs | |||
| VDRM/VRRM | 400 to 2000 | V | |||
| tq (Typical) | 100 | s | |||
| TJ | -40 to +125 | C | |||
| Voltage Ratings | |||||
| TYPE NUMBER | VOLTAGE CODE | VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE | VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE | IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM | mA |
| VS-ST180C..C | 04 | 400 | 500 | 30 | |
| VS-ST180C..C | 08 | 800 | 900 | 12 | |
| VS-ST180C..C | 12 | 1200 | 1300 | 16 | |
| VS-ST180C..C | 16 | 1600 | 1700 | 18 | |
| VS-ST180C..C | 18 | 1800 | 1900 | 20 | |
| VS-ST180C..C | 20 | 2000 | 2100 | ||
| Absolute Maximum Ratings | |||||
| Maximum average on-state current at heatsink temperature | IT(AV) 180 conduction, half sine wave, double side (single side) cooled | 350 (140) | A | ||
| 55 (85) C | |||||
| Maximum RMS on-state current | IT(RMS) DC at 25 C heatsink temperature, double side cooled | 660 | A | ||
| Maximum peak, one-cycle non-repetitive surge current | ITSM t = 10 ms, No voltage reapplied, Sinusoidal half wave, initial TJ = TJ maximum | 5000 | A | ||
| t = 8.3 ms | 5230 | A | |||
| t = 10 ms, 100 % VRRM reapplied | 4200 | A | |||
| t = 8.3 ms, 100 % VRRM reapplied | 4400 | A | |||
| Maximum I2t for fusing | I2t t = 10 ms, No voltage reapplied | 125 | kAs | ||
| t = 8.3 ms, No voltage reapplied | 114 | kAs | |||
| t = 10 ms, 100 % VRRM reapplied | 88 | kAs | |||
| t = 8.3 ms, 100 % VRRM reapplied | 81 | kAs | |||
| Maximum It for fusing | I2t t = 0.1 to 10 ms, no voltage reapplied | 1250 | kAs | ||
| Low level value of threshold voltage | VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum | 1.08 | V | ||
| High level value of threshold voltage | VT(TO)2 (I > x IT(AV)), TJ = TJ maximum | 1.14 | V | ||
| Low level value of on-state slope resistance | rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum | 1.18 | m | ||
| High level value of on-state slope resistance | rt2 (I > x IT(AV)), TJ = TJ maximum | 1.14 | m | ||
| Maximum on-state voltage | VTM Ipk = 750 A, TJ = TJ maximum, tp = 10 ms sine pulse | 1.96 | V | ||
| Maximum holding current | IH TJ = 25 C, anode supply 12 V resistive load | 600 | mA | ||
| Maximum (typical) latching current | IL | 1000 (300) | |||
| Switching Parameters | |||||
| Maximum non-repetitive rate of rise of turned-on current | dI/dt Gate drive 20 V, 20 , tr 1 s, TJ = TJ maximum, anode voltage 80 % VDRM | 1000 | A/s | ||
| Typical delay time | td Gate current 1 A, dIg/dt = 1 A/s, Vd = 0.67 % VDRM, TJ = 25 C | 1.0 | s | ||
| Typical turn-off time | tq ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V, 100 , tp = 500 s | 100 | s | ||
| Blocking Parameters | |||||
| Maximum critical rate of rise of off-state voltage | dV/dt TJ = TJ maximum, linear to 80 % rated VDRM | 500 | V/s | ||
| Maximum peak reverse and off-state leakage current | IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied | 30 | mA | ||
| Triggering Parameters | |||||
| Maximum peak gate power | PGM TJ = TJ maximum, tp 5 ms | 10 | W | ||
| Maximum average gate power | PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 | 2.0 | |||
| Maximum peak positive gate current | IGM TJ = TJ maximum, tp 5 ms | 3.0 | A | ||
| Maximum peak positive gate voltage | + VGM | 20 | V | ||
| Maximum peak negative gate voltage | - VGM | 5.0 | V | ||
| DC gate current required to trigger | IGT TJ = -40 C, anode to cathode applied | 180 | mA | ||
| TJ = 25 C | 90 | 150 mA | |||
| TJ = 125 C | 40 | - mA | |||
| DC gate voltage required to trigger | VGT TJ = -40 C | 2.9 | - V | ||
| TJ = 25 C | 1.8 | 3.0 V | |||
| TJ = 125 C | 1.2 | - V | |||
| DC gate current not to trigger | IGD TJ = TJ maximum, anode to cathode applied | 10 | mA | ||
| DC gate voltage not to trigger | VGD | 0.25 | V | ||
| Thermal and Mechanical Specifications | |||||
| Maximum operating junction temperature range | TJ | -40 to 125 | C | ||
| Maximum storage temperature range | TStg | -40 to 150 | C | ||
| Maximum thermal resistance, junction to heatsink | RthJ-hs DC operation single side cooled | 0.17 | K/W | ||
| DC operation double side cooled | 0.08 | K/W | |||
| Maximum thermal resistance, case to heatsink | RthC-hs DC operation single side cooled | 0.033 | K/W | ||
| DC operation double side cooled | 0.017 | K/W | |||
| Mounting force, 10 % | 4900 (500) | N (kg) | |||
| Approximate weight | 50 | g | |||
| Case style | See dimensions - link at the end of datasheet | A-PUK (TO-200AB) | |||
| Ordering Information | |||||
| Device code | 5 1 3 2 4 6 7 8 9 | ST | VS- | ||
| 18 | 0 | C | |||
| 20 | C | ||||
| (1) PGM = 10 W, tp = 4 ms | (2) PGM = 20 W, tp = 2 ms | (3) PGM = 40 W, tp = 1 ms | (4) PGM = 60 W, tp = 0.66 ms | ||
| Frequency limited by PG(AV) | |||||
| Rectangular gate pulse | a) Recommended load line for rated dI/dt: 20 V, 10 ; tr 1 s | b) Recommended load line for 30 % rated dI/dt: 10 V, 10 tr 1 s | |||
| Device: ST180C..C Series | |||||
| - Thyristor | 1 - Vishay Semiconductors product | 2 - Essential part number | 3 - 0 = converter grade | ||
| 4 - C = ceramic PUK | 9 - Critical dV/dt: | 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) | 6 - C = PUK case A-PUK (TO-200AB) | ||
| 7 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) | 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) | 2 = eyelet terminals (gate and auxiliary cathode soldered leads) | 3 = fast-on terminals (gate and auxiliary cathode soldered leads) | ||
| None = 500 V/s (standard selection) | L = 1000 V/s (special selection) | ||||
Note: Dimensions are in millimeters (inches).
Links to Related Documents:
- Dimensions: www.vishay.com/doc?95074
2411272151_VISHAY-VS-ST180C20C0_C17682860.pdf
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