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quality Switched mode power supply optimized with Suzhou Good Ark Elec SSFL0956 100V N Channel MOSFET device factory
quality Switched mode power supply optimized with Suzhou Good Ark Elec SSFL0956 100V N Channel MOSFET device factory

Switched mode power supply optimized with Suzhou Good Ark Elec SSFL0956 100V N Channel MOSFET device

Key Attributes
Model Number: SSFL0956
Product Custom Attributes
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-50℃~+150℃
RDS(on):
130mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
70pF
Pd - Power Dissipation:
5.2W
Input Capacitance(Ciss):
2.8nF
Output Capacitance(Coss):
120pF
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
SSFL0956
Package:
SOT-223
Product Description

Product Overview

The SSFL0956 is a 100V N-Channel MOSFET designed for high efficiency switched-mode power supplies and a wide range of other applications. It utilizes advanced MOSFET process technology to achieve high cell density and low on-resistance, resulting in improved efficiency and reliability. Key features include fast switching, low on-resistance with low gate charge, and excellent reverse body recovery. This device is ideal for applications requiring efficient power conversion.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Drain-Source Voltage VDS - - - 100 V
Drain Current-Continuous (TC=25C) ID - - - 4 A
Drain Current-Continuous (TC=100C) ID - - - 2.6 A
Drain Current-Pulsed IDM - - - 16 A
Gate-Source Voltage VGS - - - 20 V
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 100 - - V
BVDSS Temperature Coefficient BVDSS/TJ Reference to 25C, ID=1mA - 0.09 - V/C
Drain-Source Leakage Current IDSS VDS=100V, VGS=0V, TJ=25C - - 1 A
Drain-Source Leakage Current IDSS VDS=80V, VGS=0V, TJ=125C - - 10 A
Gate-Source Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.2 1.6 2.5 V
Gate Threshold Voltage VGS(th) VGS=10V, ID=4A - - 120 m
Gate Threshold Voltage VGS(th) VGS=4.5V, ID=2A - - 130 m
VGS(th) Temperature Coefficient VGS(th) - - -5 - mV/C
Forward Transconductance gfs VDS=10V, ID=2A - 8.7 - S
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=4A - - 120 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=2A - - 130 m
Total Gate Charge Qg VDS=50V, ID=2A, VGS=10V - 20 40 nC
Gate-Source Charge Qgs - - 3.2 6 nC
Gate-Drain Charge Qgd - - 3.6 7 nC
Turn-On Delay Time td(on) VDD=50V, RG=3.3, VGS=10V, ID=1A - 18 36 nS
Rise Time tr - - 4 8 nS
Turn-Off Delay Time td(off) - - 40 80 nS
Fall Time tf - - 3 6 nS
Input Capacitance Clss VDS=25V, VGS=0V, F=1MHz - 1400 2800 pF
Output Capacitance Coss - - 60 120 pF
Reverse Transfer Capacitance Crss - - 35 70 pF
Gate Resistance Rg VGS=0V, VDS=0V, F=1MHz - 2 4
Continuous Source Current IS - - - 4 A
Pulsed Source Current ISM - - - 8 A
Diode Forward Voltage VSD VGS=0V, IS=1A, TJ=25C - - 1 V
Power Dissipation PD TC=25C - - 5.2 W
Power Dissipation-Derate above 25C - - - - 0.042 W/C
Thermal Resistance, Junction-to-Case RJC - - - 24 C/W
Thermal Resistance, Junction-to-Ambient RJA - - - 70 C/W
Operating Junction Temperature Range TJ - -50 - 150 C
Storage Temperature Range TSTG - -50 - 150 C

Package: SOT-223

Model: SSFL0956


2411201841_Suzhou-Good-Ark-Elec-SSFL0956_C19841894.pdf

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