Loss PNP Transistor Taiwan Semiconductor BC856B RFG with High Surge Current and Halogen Free Material
Key Attributes
Model Number:
BC856B RFG
Product Custom Attributes
Current - Collector Cutoff:
100nA
DC Current Gain:
220@2mA,5V
Transition Frequency(fT):
100MHz
Type:
PNP
Vce Saturation(VCE(sat)):
650mV@5mA,100mA
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BC856B RFG
Package:
SOT-23
Product Description
Product Overview
The BC856A/B, BC857A/B/C, and BC858A/B/C are PNP small signal transistors from Taiwan Semiconductor. These devices offer low power loss and high efficiency, making them ideal for automated placement. They feature high surge current capability, are moisture sensitive level 1 per J-STD-020, and are RoHS compliant and Halogen-free.
Product Attributes
- Brand: Taiwan Semiconductor
- Certifications: RoHS Compliant, Halogen-free according to IEC 61249-2-21, Moisture sensitivity level: level 1, per J-STD-020
- Material: Molding compound meets UL 94 V-0 flammability rating
- Terminal: Matte tin plated leads, solderable per J-STD-002, Meet JESD 201 class 1A whisker test
Technical Specifications
| Parameter | Symbol | BC856 | BC857 | BC858 | Unit |
| Collector-base voltage | VCBO | -80 | -50 | -30 | V |
| Collector-emitter voltage | VCEO | -65 | -45 | -30 | V |
| Emitter-base voltage | VEBO | -5 | -5 | -5 | V |
| Collector current | IC | -0.1 | -0.1 | -0.1 | A |
| Power dissipation | PD | 200 | 200 | 200 | mW |
| Junction temperature | TJ | -55 to +150 | -55 to +150 | -55 to +150 | C |
| Storage temperature | TSTG | -55 to +150 | -55 to +150 | -55 to +150 | C |
| Collector cutoff current (VCB = -70V for BC856, VCB = -45V for BC857, VCB = -25V for BC858, IE = 0) | ICBO | -100 | -100 | -100 | nA |
| Emitter cutoff current (VEB = -5V, IC = 0) | IEBO | -0.1 | -0.1 | -0.1 | A |
| DC current gain (VCE= -5V, IC = -2mA) | hFE | 125-250 (A), 220-475 (B), 420-800 (C) | 125-250 (A), 220-475 (B), 420-800 (C) | 125-250 (A), 220-475 (B), 420-800 (C) | |
| Collector-emitter saturation voltage (IC = -100 mA, IB = -5 mA) | VCE(sat) | -0.65 | -0.65 | -0.65 | V |
| Base-emitter saturation voltage (IC = -100 mA, IB = -5 mA) | VBE(sat) | -1.10 | -1.10 | -1.10 | V |
| Transition frequency (VCE = -5V , IC = -10mA, f= 100MHz) | fT | 100 | 100 | 100 | MHz |
2411121043_Taiwan-Semiconductor-BC856B-RFG_C7085397.pdf
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