40A Triacs WEIDA BTA41-800B Series Suitable for High Current Switching and Inductive Load Applications

Key Attributes
Model Number: BTA41-800B
Product Custom Attributes
Holding Current (Ih):
60mA
Current - Gate Trigger(Igt):
50mA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
40A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
400A
SCR Type:
1 TRIAC
Gate Trigger Voltage (Vgt):
1.3V
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
BTA41-800B
Package:
TO-3P
Product Description

Product Overview

The Jiangsu Weida Semiconductor BTA41 Series 40A Triacs are designed for high current shock loading applications, offering a high dv/dt rate and strong resistance to electromagnetic interference. These triacs feature excellent commutation performance, with 3-quadrant products specifically recommended for inductive loads. They provide an insulation voltage of 2500V RMS from all terminals to the heatsink, complying with UL standards.

Product Attributes

  • Brand: Jiangsu Weida Semiconductor Co., Ltd.
  • Series: BTA41 Series
  • Product Type: Triacs
  • Current Rating: 40A
  • Certifications: UL standards (for insulation voltage)

Technical Specifications

ParameterSymbolValueUnitNotes
RMS On-State CurrentIT(RMS)40.0A
Repetitive Peak Off-State VoltageVDRM600/800/1200/1600V(Tj=25)
Repetitive Peak Reverse VoltageVRRM600/800/1200/1600V(Tj=25)
Non-Repetitive Surge Peak On-State CurrentITSM400A(full cycle, F=50Hz)
I2t Value for FusingI2t880A2s(tp=10ms)
Critical Rate of Rise of On-State CurrentdI/dt50A/s(IG=2IGT)
Peak Gate CurrentIGM4A
Average Gate Power DissipationPG(AV)1W
Peak Gate PowerPGM10W
Storage Junction Temperature RangeTstg-40~150
Operating Junction Temperature RangeTj-40~125
Gate Trigger Current (3 Quadrants)IGTMAX 50mAVD=12V, RL=33
Gate Trigger Voltage (3 Quadrants)VGT1.3V
Gate Non-Trigger Voltage (3 Quadrants)VGDMIN 0.2VVD=VDRM, Tj=125
Holding Current (3 Quadrants)IHMAX 60mAIT=100mA
Latching Current (Quadrant II, 3 Quadrants)IL100mAIG=1.2IGT
Critical dV/dt (3 Quadrants)dV/dtMIN 1000V/sVD=2/3VDRM, Tj=125, Gate open
Gate Trigger Current (4 Quadrants)IGTMAX 50 (I-II-III), MAX 70 (IV)mAVD=12V, RL=33
Gate Trigger Voltage (4 Quadrants)VGT1.3VALL Quadrants
Gate Non-Trigger Voltage (4 Quadrants)VGDMIN 0.2VVD=VDRM, Tj=125, ALL Quadrants
Holding Current (4 Quadrants)IHMAX 60mAIT=100mA
Latching Current (Quadrants I-III-IV, 4 Quadrants)ILMAX 80mAIG=1.2IGT
Latching Current (Quadrant II, 4 Quadrants)IL100mAIG=1.2IGT
Critical dV/dt (4 Quadrants)dV/dtMIN 1000V/sVD=2/3VDRM, Tj=125, Gate open
On-State VoltageVTMMAX 1.55VITM=60A, tp=380s, Tj=25
Off-State Current (IDRM/IRRM)IDRM/IRRMMAX 10 (Tj=25), MAX 5 (Tj=125)AVDRM= VRRM
Thermal Resistance (Junction to Case, AC) TO-3P(Ins)Rth(j-c)1.1/W
Thermal Resistance (Junction to Case, AC) TO-247(Non-Ins)Rth(j-c)0.91/W
Thermal Resistance (Junction to Case, AC) TG-CRth(j-c)0.65/W

2410122017_WEIDA-BTA41-800B_C2915232.pdf

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