rectification Taiwan Semiconductor S1MH surface mount rectifiers for lighting and power conversion
Key Attributes
Model Number:
S1MH
Product Custom Attributes
Mfr. Part #:
S1MH
Package:
DO-214AC(SMA)
Product Description
Product Overview
The S1A S1M series from Taiwan Semiconductor are surface mount rectifiers featuring glass passivated chip junctions, ideal for automated placement. They offer a low forward voltage drop and are designed for applications requiring reliable rectification, such as DC to DC converters, switching mode converters and inverters, lighting applications, and general-purpose rectification. These rectifiers are moisture sensitivity level 1, RoHS compliant, and halogen-free.
Product Attributes
- Brand: Taiwan Semiconductor
- Certifications: RoHS Compliant, Halogen-free according to IEC 61249-2-21
- Moisture Sensitivity Level: Level 1, per J-STD-020
- Material: Glass passivated chip junction, Molding compound meets UL 94V-0 flammability rating, Matte tin plated leads
- Origin: Taiwan Semiconductor
Technical Specifications
| Parameter | Symbol | S1A | S1B | S1D | S1G | S1J | S1K | S1M | Unit |
| Marking code on the device | S1A | S1B | S1D | S1G | S1J | S1K | S1M | ||
| Repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Reverse voltage, total rms value | VR(RMS) | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Forward current | IF | 1 | A | ||||||
| Peak forward surge current, 8.3ms single half sine wave superimposed on rated load | IFSM | 40 | 30 | A | |||||
| Non-repetitive peak reverse avalanche energy, IAS = 1A, L = 10mH | ERSM | 5 | mJ | ||||||
| Junction temperature | TJ | - 55 to +175 | C | ||||||
| Storage temperature | TSTG | - 55 to +175 | C | ||||||
| Junction-to-lead thermal resistance | RJL | 27 | 30 | C/W | |||||
| Junction-to-ambient thermal resistance | RJA | 75 | 85 | C/W | |||||
| Forward voltage (IF = 1A, TJ = 25C) | VF | - 1.1 | V | ||||||
| Reverse current @ rated VR (TJ = 25C) | IR | - 1 | A | ||||||
| Reverse current @ rated VR (TJ = 125C) | IR | - 50 | A | ||||||
| Junction capacitance (1MHz, VR = 4.0V) | CJ | 12 | pF | ||||||
| Reverse recovery time (IF = 0.5A, IR = 1.0A, Irr = 0.25A) | trr | 1500 | ns | ||||||
2412091033_Taiwan-Semiconductor-S1MH_C17497904.pdf
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