400V N Channel MOSFET Extended Safe Operating Area Wild Goose WGF11N40SE with Unrivalled Gate Charge
Key Attributes
Model Number:
WGF11N40SE
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-
RDS(on):
500mΩ@10V,5.5A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
-
Pd - Power Dissipation:
45W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
WGF11N40SE
Package:
TO-220F
Product Description
Product Overview
The WGF11N40SE is a 400V N-Channel MOSFET designed for applications requiring excellent switching characteristics and low intrinsic capacitances. It offers an extended safe operating area and an unrivalled gate charge of 28nC (Typ.). This MOSFET is 100% avalanche tested and is suitable for various power electronics applications.
Product Attributes
- Brand: WildGoose Semiconductor
- Model: WGF11N40SE
- Package Type: TO-220F
- Channel Type: N-Channel
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Low Intrinsic Capacitances | ||||||
| Excellent Switching Characteristics | ||||||
| Extended Safe Operating Area | ||||||
| Qg | Unrivalled Gate Charge | 28 | nC | |||
| VDSS | Drain-Source Voltage | 400 | V | |||
| ID | Drain Current | TC=25 | 11 | A | ||
| ID | Drain Current | TC=100 | 6.3 | A | ||
| RDS(on) | Static Drain-Source On-Resistance | ID=5.5A,VGS=10V | 0.43 | 0.50 | ||
| 100% Avalanche Tested | ||||||
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | (Ta=25) | 400 | V | ||
| ID | Drain Current | TC=25 | 11 | A | ||
| ID | Drain Current | TC=100 | 6.3 | A | ||
| VGSS | Gate-Source Voltage | (Ta=25) | 30 | V | ||
| EAS | Single Pulse Avalanche Energy | (note1) | 500 | mJ | ||
| IAR | Avalanche Current | (note2) | 11 | A | ||
| PD | Power Dissipation | (Tc=25) | 45 | W | ||
| Tj | Junction Temperature(Max) | 150 | ||||
| Tstg | Storage Temperature | -55 | +150 | |||
| TL | Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds | 300 | ||||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | - | - | - | /W | |
| RJA | Thermal Resistance, Junction to Ambient | - | - | 62.5 | /W | |
| RCS | Thermal Resistance, Case to Sink | 0.5 | - | - | /W | |
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | ID=250AVGS=0 | 400 | - | - | V |
| BVDSS/TJ | Breakdown Voltage Temperature Coefficient | ID=250A ,Reference to 25 | - | -0.55 | - | V/ |
| IDSS | Zero Gate Voltage Drain Current | VDS=400V, VGS=0V | - | - | 1 | A |
| IDSS | Zero Gate Voltage Drain Current | VDS=360V, Tc=125 | - | - | 10 | A |
| IGSSF | Gate-body leakage Current, Forward | VGS=+30V, VDS=0V | - | - | 100 | nA |
| IGSSR | Gate-body leakage Current, Reverse | VGS=-30V, VDS=0V | - | - | -100 | nA |
| On Characteristics | ||||||
| VGS(TH) | Gate Threshold Voltage | ID=250A,VDS=VGS | 2 | - | 4 | V |
| RDS(ON) | Static Drain-Source On-Resistance | ID=5.5A,VGS=10V | - | 0.43 | 0.50 | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25VVGS=0 f=1.0MHz | - | 1200 | - | pF |
| Coss | Output Capacitance | - | 150 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 20 | - | pF | |
| Switching Characteristics | ||||||
| Td(on) | Turn-On Delay Time | VDD=200VID=11A RG=12 (Note 3,4) | - | 14 | - | ns |
| Tr | Turn-On Rise Time | - | 25 | - | ns | |
| Td(off) | Turn-Off Delay Time | - | 44 | - | ns | |
| Tf | Turn-Off Rise Time | - | 28 | - | ns | |
| Qg | Total Gate Charge | VDS=200V,VGS=10V ID=11A (Note 3,4) | - | 28 | 35 | nC |
| Qgs | Gate-Source Charge | - | 7.0 | - | nC | |
| Qgd | Gate-Drain Charge | - | 11.0 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Is | Max. Diode Forward Current | - | - | 11 | A | |
| Ism | Max. Pulsed Forward Current | - | - | 40 | A | |
| Vsd | Diode Forward Voltage | ID=11A | - | - | 1.8 | V |
| Trr | Reverse Recovery Time | IS=1 A,VGS =0V diF/dt=100A/s (Note3) | - | 303 | - | nS |
| Qrr | Reverse Recovery Charge | - | - | - | C | |
| Package Dimensions (TO-220F) | ||||||
| Symbol | Size | Unit | Min | Max | ||
| W | 9.96 | mm | 9.96 | 10.36 | ||
| W1 | 2.54 (TYP) | |||||
| W2 | 0.70 | mm | 0.70 | 0.90 | ||
| W3 | 1.24 | mm | 1.24 | 1.47 | ||
| W4 | 0.25 | mm | 0.25 | 0.45 | ||
| L | 15.67 | mm | 15.67 | 16.07 | ||
| L1 | 6.48 | mm | 6.48 | 6.88 | ||
| L2 | 3.20 | mm | 3.20 | 3.40 | ||
| L3 | 12.78 | mm | 12.78 | 13.18 | ||
| T | 4.50 | mm | 4.50 | 4.90 | ||
| T1 | 2.34 | mm | 2.34 | 2.74 | ||
| T2 | 2.56 | mm | 2.56 | 2.96 | ||
| T3 | 0.45 | mm | 0.45 | 0.60 | ||
| G() | 3.08 | mm | 3.08 | 3.28 | ||
2411220336_Wild-Goose-WGF11N40SE_C17702321.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
