Synchronous Buck Converter N Channel MOSFET Winsok Semicon WSD80N10GDN56 featuring low gate charge
Key Attributes
Model Number:
WSD80N10GDN56
Product Custom Attributes
Mfr. Part #:
WSD80N10GDN56
Package:
DFN-8L(5x6)
Product Description
Product Overview
The WSD80N10GDN56 is a high-performance N-Channel MOSFET featuring an extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: Winsok
- Certifications: RoHS Compliant, Green Devices Available
- Testing: 100% UIS Tested, 100% EAS guaranteed
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 100 | --- | --- | V |
| Static Drain-Source On-Resistance | RDS ON | VGS=10V , ID=20A | --- | 6.7 | 7.8 | m |
| Static Drain-Source On-Resistance | RDS ON | VGS=4.5V , ID=20A, TJ=125C | --- | 7.8 | 9.9 | m |
| Gate Threshold Voltage | VGS th | VGS=VDS , ID=250A | 1.2 | 1.7 | 2.5 | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V | --- | --- | 1.0 | A |
| Gate-Source Leakage Current | IGSS | VDS=0V , VGS=20V | --- | --- | 100 | nA |
| Forward Transconductance | gfs | VDS=10V , ID=20A | --- | 20 | --- | S |
| Gate Resistance | RG | =1.0MHz | 1.0 | 2.0 | 3.0 | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=20A | --- | 44 | --- | nC |
| Gate-Source Charge | Qgs | VDS=50V , VGS=10V , ID=20A | --- | 9.5 | --- | nC |
| Gate-Drain Charge | Qgd | VDS=50V , VGS=10V , ID=20A | --- | 7.8 | --- | nC |
| Turn-On Delay Time | td on | VDD=50V , VGS=10V , ID=20A RL=1 , RGEN=3 | --- | 11 | --- | ns |
| Rise Time | Tr | VDD=50V , VGS=10V , ID=20A RL=1 , RGEN=3 | --- | 10 | --- | ns |
| Turn-Off Delay Time | td off | VDD=50V , VGS=10V , ID=20A RL=1 , RGEN=3 | --- | 34 | --- | ns |
| Fall Time | Tf | VDD=50V , VGS=10V , ID=20A RL=1 , RGEN=3 | --- | 46 | --- | ns |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , =1.0MHz | --- | 2600 | --- | pF |
| Output Capacitance | Coss | VDS=50V , VGS=0V , =1.0MHz | --- | 800 | --- | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V , VGS=0V , =1.0MHz | --- | 20 | --- | pF |
| Continuous Source Current | IS | --- | --- | --- | 80 | A |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A | --- | 0.7 | 1.2 | V |
| Reverse Recovery Time | trr | IF=20A , di/dt=500A/s | --- | 47 | --- | ns |
| Reverse Recovery Charge | Qrr | IF=20A , di/dt=500A/s | --- | 50 | --- | nC |
| Drain-Source Voltage | VDS | --- | --- | --- | 100 | V |
| Gate-Source Voltage | VGS | --- | --- | 20 | --- | V |
| Continuous Drain Current | ID | TC=25C | --- | --- | 80 | A |
| Continuous Drain Current | ID | TC=100C | --- | --- | 56 | A |
| Pulse Drain Current | IDM | --- | --- | --- | 320 | A |
| Power Dissipation | PD | TC=25C | --- | --- | 111 | W |
| Single pulse Avalanche Current | IAS | --- | --- | --- | 27 | A |
| Single pulse Avalanche Energy | EAS | L=0.5mH | --- | --- | 230 | mJ |
| Storage Temperature Range | TSTG | --- | -55 | --- | 150 | C |
| Operating Junction Temperature Range | TJ | --- | -55 | --- | 150 | C |
| Thermal Resistance-Junction to Ambient | RJA | t10s | --- | 30 | --- | C/W |
| Thermal Resistance-Junction to Ambient | RJA | Steady State | --- | 40 | --- | C/W |
| Thermal Resistance-Junction to Case | RJC | --- | --- | 1.1 | --- | C/W |
2510131755_Winsok-Semicon-WSD80N10GDN56_C52034118.pdf
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