Silicon Carbide Schottky Diode Wolfspeed C4D20120A 1200 Volt 20 Amp for Industrial Power Applications
Key Attributes
Model Number:
C4D20120A
Product Custom Attributes
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
1.8V@20A
Reverse Leakage Current (Ir):
200uA@1200V
Current - Rectified:
54.5A
Mfr. Part #:
C4D20120A
Package:
TO-220-2
Product Description
Product Overview
The Wolfspeed C4D20120A is a 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode. Leveraging the performance advantages of SiC technology, this diode enables power electronics systems to achieve higher efficiency standards compared to silicon-based solutions, while also supporting higher frequencies and power densities. Its design allows for easy paralleling to meet diverse application demands without the risk of thermal runaway. Combined with reduced cooling requirements and improved thermal performance, SiC diodes contribute to lower overall system costs. This device is suitable for industrial switched-mode power supplies, uninterruptible & AUX power supplies, boost for PFC & DC-DC stages, and solar inverters.
Product Attributes
- Brand: Wolfspeed
- Material: Silicon Carbide (SiC)
- Package Type: TO-220-2
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions | Notes |
|---|---|---|---|---|---|
| Maximum Ratings (TC = 25C Unless Otherwise Specified) | |||||
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | DC Blocking Voltage | |
| Continuous Forward Current | IF | 54.5 | A | TJ = 25 C | Fig. 3 |
| 26 | A | TJ = 135 C | |||
| 20 | A | TJ = 150 C | |||
| Repetitive Peak Forward Surge Current | IFRM | 91 | A | TC = 25 C, tp = 10 ms, Half Sine Wave | |
| 61 | A | TC = 110 C, tp = 10 ms, Half Sine Wave | |||
| Non-Repetitive Forward Surge Current | IFSM | 130 | A | TC = 25 C, tp = 10 ms, Half Sine Wave | Fig. 8 |
| 110 | A | TC = 110 C, tp = 10 ms, Half Sine Wave | |||
| Non-Repetitive Peak Forward Surge Current | IF,Max | 1150 | A | TC = 25 C, tp = 10 s, Pulse | |
| 950 | A | TC = 110C, tp = 10 s, Pulse | |||
| Power Dissipation | Ptot | 250 | W | TJ = 25 C | Fig. 4 |
| 112.5 | W | TJ = 110 C | |||
| i2t Value | i2t | 84.5 | As | TC = 25 C, tp = 10 ms | |
| 60.5 | As | TC = 110C, tp = 10 ms | |||
| Electrical Characteristics | |||||
| Forward Voltage | VF | 1.5 (Typ.) | V | IF = 20 A, Tj = 25 C | Fig. 1 |
| 1.8 (Max.) | V | ||||
| 2.2 (Typ.) | V | IF = 20 A, Tj = 175 C | |||
| 3 (Max.) | V | ||||
| Reverse Current | IR | 35 (Typ.) | A | VR = 1200 V, Tj = 25 C | Fig. 2 |
| 200 (Max.) | A | ||||
| 65 (Typ.) | A | VR = 1200 V, Tj = 175 C | |||
| 400 (Max.) | A | ||||
| Total Capacitive Charge | QC | 99 | nC | VR = 800 V, Tj = 25 C | Fig. 5 |
| Total Capacitance | C | 1500 | pF | VR = 0 V, Tj = 25 C, f = 1 MHz | Fig. 6 |
| 93 | pF | VR = 400 V, Tj = 25 C, f = 1 MHz | |||
| 67 | pF | VR = 800 V, Tj = 25 C, f = 1 MHz | |||
| Capacitance Stored Energy | EC | 28 | J | VR = 800 V | Fig. 7 |
| Thermal & Mechanical Characteristics | |||||
| Thermal Resistance, Junction to Case (Typical) | R,JC (TYP) | 0.6 | C / W | ||
| Junction Temperature | Tj | -55 to +175 | C | ||
| Case & Storage Temperature | Tc | -55 to +175 | C | ||
| TO-220 Mounting Torque | 1 | Nm | M3 Screw | ||
| 8.8 | lbf-in | 6-32 Screw | |||
| Electrostatic Discharge (ESD) Classifications | |||||
| Human Body Model | HBM | Class 3B ( 8000 V) | |||
| Charge Device Model | CDM | Class C3 ( 1000 V) | |||
Package Dimensions & Pin-Out: TO-220-2
Pin Configuration: 1: CATHODE, 2: ANODE, 3: CATHODE
Product Ordering Information:
- Order Number: C4D20120A
- Packing Type: Tube
2312271233_Wolfspeed-C4D20120A_C7457644.pdf
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