6th Generation Silicon Carbide Diode Wolfspeed C6D50065D1 650 Volt 50 Amp Schottky Barrier Technology
Key Attributes
Model Number:
C6D50065D1
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
136A
Operating Temperature -:
-55℃~+175℃
Pd - Power Dissipation:
349W
Mfr. Part #:
C6D50065D1
Product Description
Wolfspeed C6D50065D1: 6th Generation 650 V, 50 A Silicon Carbide Schottky Diode
Product Overview
The Wolfspeed C6D50065D1 is a 6th Generation 650 V, 50 A Silicon Carbide (SiC) Schottky Barrier Diode. Leveraging SiC technology, this diode offers significant performance advantages over traditional silicon-based solutions, enabling higher efficiency standards, increased switching frequencies, and improved power densities. Its design features include low forward voltage (VF) drop with a positive temperature coefficient, zero reverse recovery current, and temperature-independent switching behavior. These characteristics make it ideal for demanding applications such as industrial power supplies, battery charging systems, switch mode power supplies, solar inverters, and server/telecom power supplies. SiC diodes can be easily paralleled without concern of thermal runaway, contributing to lower overall system costs due to reduced cooling requirements and improved thermal performance.
Product Attributes
- Brand: Wolfspeed
- Material: Silicon Carbide (SiC)
- Package Type: TO-247-3
- Certifications: REACh, RoHS, Halogen-Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions | Notes |
|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 650 | V | DC Blocking Voltage | |
| Continuous Forward Current | IF | 136 | A | TJ = 25 C | Fig. 3 |
| Continuous Forward Current | IF | 69 | A | TJ = 125 C | Fig. 3 |
| Continuous Forward Current | IF | 43 | A | TJ = 150 C | Fig. 3 |
| Repetitive Peak Forward Surge Current | IFRM | 166 | A | TC = 25 C, tp = 10 ms, Half Sine Wave | |
| Repetitive Peak Forward Surge Current | IFRM | 94 | A | TC = 110 C, tp = 10 ms, Half Sine Wave | |
| Non-Repetitive Forward Surge Current | IFSM | 303 | A | TC = 25 C, tp = 10 ms, Half Sine Wave | Fig. 8 |
| Non-Repetitive Forward Surge Current | IFSM | 268 | A | TC = 110 C, tp = 10 ms, Half Sine Wave | Fig. 8 |
| Non-Repetitive Peak Forward Surge Current | IF,Max | 1500 | A | TC = 25 C, tp = 10 s, Pulse | |
| Non-Repetitive Peak Forward Surge Current | IF,Max | 1320 | A | TC = 110 C, tp = 10 s, Pulse | |
| Power Dissipation | Ptot | 349 | W | TJ = 25 C | Fig. 4 |
| Power Dissipation | Ptot | 151 | W | TJ = 110 C | Fig. 4 |
| i2t value | i2dt | 459 | As | TC= 25C, tp=10ms | |
| i2t value | i2dt | 359 | As | TC = 110C, tp=10ms | |
| Forward Voltage | VF | 1.30 | V | IF = 50 A, Tj = 25 C | Typ., Fig. 1 |
| Forward Voltage | VF | 1.46 | V | IF = 50 A, Tj = 175 C | Typ. |
| Reverse Current | IR | 6 | A | VR = 650 V, Tj = 25 C | Typ., Fig. 2 |
| Reverse Current | IR | 65 | A | VR = 650 V, Tj = 175 C | Typ. |
| Total Capacitive Charge | QC | 158 | nC | VR = 400 V, Tj = 25 C | Fig. 5 |
| Total Capacitance | C | 2819 | pF | VR = 0 V, Tj = 25 C, f = 1 MHz | Fig. 6 |
| Total Capacitance | C | 300 | pF | VR = 200 V, Tj = 25 C, f = 1 MHz | Fig. 6 |
| Total Capacitance | C | 244 | pF | VR = 400 V, Tj = 25 C, f = 1 MHz | Fig. 6 |
| Capacitance Stored Energy | Ec | 24 | J | VR = 400 V | Fig. 7 |
| Thermal Resistance, Junction to Case (Typical) | R,JC (TYP) | 0.37 | C / W | ||
| Junction Temperature | Tj | -55 to +175 | C | ||
| Case & Storage Temperature | Tc | -55 to +175 | C | ||
| Mounting Torque | 1 | Nm | M3 Screw | ||
| Mounting Torque | 8.8 | lbf-in | 6-32 Screw | ||
| Human Body Model (HBM) ESD Classification | Class 3B ( 8000 V) | ||||
| Charge Device Model (CDM) ESD Classification | Class C3 ( 1000 V) |
Product Ordering Information
| Order Number | Packing Type |
|---|---|
| C6D50065D1 | Tube |
2410301854_Wolfspeed-C6D50065D1_C20556464.pdf
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