Silicon Carbide Half Bridge Module Wolfspeed EAB450M12XM3 1200 Volt 2.6 Milliohm SiC MOSFET Module
Key Attributes
Model Number:
EAB450M12XM3
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
450A
RDS(on):
3.7mΩ@15V
Operating Temperature -:
-40℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3.6V@132mA
Reverse Transfer Capacitance (Crss@Vds):
90pF
Output Capacitance(Coss):
1.5nF
Input Capacitance(Ciss):
38nF
Pd - Power Dissipation:
1.364kW
Mfr. Part #:
EAB450M12XM3
Product Description
Wolfspeed EAB450M12XM3: 1200 V, 2.6 m Silicon Carbide Half-Bridge Module
Product Overview
The Wolfspeed EAB450M12XM3 is a 1200 V, 2.6 m Silicon Carbide (SiC) half-bridge module designed for high-power density applications. It features a high junction temperature operation of 175 C and a low inductance design of 6.7 nH, utilizing third-generation SiC MOSFET technology. Key benefits include a terminal layout for direct bus bar connection, enabling a simple, low inductance design, and isolated, integrated temperature sensing for high-level temperature protection. The module also offers a dedicated high-side Kelvin-drain pin for direct voltage sensing for gate driver overcurrent protection. Typical applications include motor drives, traction drives, vehicle fast chargers, and automotive test equipment systems.
Product Attributes
- Brand: Wolfspeed
- Technology: Silicon Carbide (SiC) MOSFET
- Insulator Material: Silicon Nitride
- Baseplate Material: Copper
- Certifications: RoHS Compliant, REACh Compliant
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions | Notes |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 1200 | V | TC = 25 C | |||
| Maximum Gate-Source Voltage | VGS max | -8 | +19 | V | Transient Fig. 32 | Note 1 | |
| Operational Gate-Source Voltage | VGS op | -4 | +15 | V | |||
| Static DC Continuous Drain Current | ID | 450 | A | VGS = 15 V, TC = 25 C, TVJ 175 C | Notes 2, 3, 4, Fig. 20 | ||
| Static DC Continuous Drain Current | ID | 409 | A | VGS = 15 V, TC = 90 C, TVJ 175 C | |||
| Pulsed Drain Current | IDM | 900 | A | VGS = 15 V, TC = 25 C | tPmax limited by Tj max | ||
| Power Dissipation | PD | 1364 | W | TC = 25 C, TVJ 175 C | Note 5, Fig. 21 | ||
| Virtual Junction Temperature Operation | TVJ op | -40 | 175 | C | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS = 0 V, TVJ = -40 C | |||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.5 | 3.6 | V | VDS = VGS, IDS = 132 mA | |
| Gate Threshold Voltage | VGS(th) | 2 | V | VDS = VGS, IDS = 132 mA, TVJ = 175C | |||
| Zero Gate Voltage Drain Current | IDSS | 5 | 500 | A | VGS = 0 V, VDS = 1200 V | ||
| Gate-Source Leakage Current | IGSS | 0.05 | 1.3 | A | VGS = 15 V, VDS = 0 V | ||
| Drain-Source On-State Resistance | RDS(on) | 2.6 | 3.7 | m | VGS = 15 V, ID = 450 A | Fig. 2, Fig. 3 | |
| Drain-Source On-State Resistance | RDS(on) | 4.6 | m | VGS = 15 V, ID = 450 A, TVJ = 175 C | |||
| Transconductance | gfs | 355 | S | VDS = 20 V, ID = 450 A | Fig. 4 | ||
| Transconductance | gfs | 360 | S | VDS = 20 V, ID = 450 A, TVJ = 175 C | |||
| Turn-On Switching Energy | EOn | 11.0 | 11.7 | 13.0 | mJ | VDD = 600 V, ID = 450 A, VGS = -4 V/15 V, RG(EXT) = 0.0 , L = 13.6 H | TVJ = 25 C, TVJ = 125 C, TVJ = 175 C, Fig. 11, Fig. 13 |
| Turn-Off Switching Energy | EOff | 10.1 | 11.3 | 12.1 | mJ | VDD = 600 V, ID = 450 A, VGS = -4 V/15 V, RG(EXT) = 0.0 , L = 13.6 H | TVJ = 25 C, TVJ = 125 C, TVJ = 175 C, Fig. 11, Fig. 13 |
| Internal Gate Resistance | RG(int) | 2.5 | f = 100 kHz | ||||
| Input Capacitance | Ciss | 38.0 | nF | VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz | Fig. 9 | ||
| Output Capacitance | Coss | 1.5 | nF | ||||
| Reverse Transfer Capacitance | Crss | 90 | pF | ||||
| Gate to Source Charge | QGS | 355 | nC | VDS = 800 V, VGS = -4 V/15 V, ID = 450 A, Per IEC60747-8-4 pg 21 | |||
| Gate to Drain Charge | QGD | 500 | nC | ||||
| Total Gate Charge | QG | 1330 | nC | ||||
| FET Thermal Resistance, Junction to Case | Rth JC | 0.11 | 0.145 | C/W | Fig. 17 | ||
| Body Diode Forward Voltage | VSD | 4.7 | V | VGS = -4 V, ISD = 450 A | Fig. 7 | ||
| Body Diode Forward Voltage | VSD | 4.2 | V | VGS = -4 V, ISD = 450 A, TVJ = 175 C | |||
| Reverse Recovery Time | tRR | 52 | ns | VGS = -4 V, ISD = 450 A, VDS= 600 V, di/dt = 8 A/ns, TVJ = 175 C | |||
| Reverse Recovery Charge | QRR | 6.6 | C | ||||
| Peak Reverse Recovery Current | IRRM | 195 | A | ||||
| Reverse Recovery Energy | ERR | 0.2 | 1.1 | 1.9 | mJ | VDD = 600 V, ID = 450 A, VGS = -4 V/15 V, RG(EXT) = 0.0 L = 13.6 H | TVJ = 25 C, TVJ = 125 C, TVJ = 175 C, Fig. 14 |
| Package Resistance, M1 (High-Side) | R3-1 | 0.72 | m | TC = 125C | Note 6 & 7 | ||
| Package Resistance, M2 (Low-Side) | R1-2 | 0.63 | m | TC = 125C | Note 6 & 7 | ||
| Stray Inductance | LStray | 6.7 | nH | Between terminals 2 & 3, f = 10 MHz | |||
| Case Temperature | TC | -40 | 125 | C | |||
| Mounting Torque | MS | 2.0 | 4.0 | N-m | Baseplate, M4 bolts | ||
| Mounting Torque | MS | 2.0 | 5.0 | N-m | Power Terminals, M5 bolts | ||
| Weight | W | 175 | g | ||||
| Case Isolation Voltage | Visol | 4.0 | kV AC | 50 Hz, 1 minute | |||
| Comparative Tracking Index | CTI | 600 | |||||
| Clearance Distance | 12.5 | mm | From 2 to 3 | Note 7 | |||
| Clearance Distance | 11.5 | mm | From 1 to Baseplate | Note 7 | |||
| Clearance Distance | 5.7 | mm | From 2 to 5 | Note 7 | |||
| Clearance Distance | 13.7 | mm | From 5 to Baseplate | Note 7 | |||
| Creepage Distance | 14.7 | mm | From 2 to 3 | Note 7 | |||
| Creepage Distance | 14.0 | mm | From 1 to Baseplate | Note 7 | |||
| Creepage Distance | 14.7 | mm | From 2 to 5 | Note 7 | |||
| Creepage Distance | 14.3 | mm | From 5 to Baseplate | Note 7 | |||
| NTC Resistance at 25C | R25 | 4700 | TNTC = 25 C | Tolerance 1 % | |||
| NTC Beta Value (25C to 85C) | B25/85 | 3435 | K | Tolerance 1 % | |||
| NTC Beta Value (0C to 100C) | B0/100 | 3399 | K | ||||
| NTC Maximum Power Dissipation | P25 | 50 | mW |
2410301853_Wolfspeed-EAB450M12XM3_C20544726.pdf
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