1200V 10A Trench Field Stop IGBT SPTECH SPT10N120T1 with low saturation voltage and high ruggedness
Key Attributes
Model Number:
SPT10N120T1
Product Custom Attributes
Pd - Power Dissipation:
260W
Td(off):
70ns
Operating Temperature:
-40℃~+150℃
Td(on):
22ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@250uA
Gate Charge(Qg):
84nC@15V
Reverse Recovery Time(trr):
270ns
Switching Energy(Eoff):
170uJ
Turn-On Energy (Eon):
1.2mJ
Mfr. Part #:
SPT10N120T1
Package:
TO-247-3
Product Description
Product Overview
The SPT10N120T1 is a 1200V / 10A Trench Field Stop IGBT designed for high reliability and robust performance. It features Trench-Stop Technology for very tight parameter distribution, high ruggedness, and stable temperature behavior. Key advantages include a short circuit withstand time of 10s, low VCE(SAT), and easy parallel switching capability due to a positive temperature coefficient in VCE(SAT). The device also offers enhanced avalanche capability.
Product Attributes
- Brand: Superic
- Product Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| IGBT Electrical Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=250A | 1200 | - | - | V |
| Gate threshold voltage | VGE(th) | VGE=VCE, IC=250A | 5.2 | 5.8 | 6.8 | V |
| Collector-Emitter Saturation voltage | VCE(sat) | VGE=15V, IC=10A, Tj = 25C | - | 1.60 | - | V |
| Collector-Emitter Saturation voltage | VCE(sat) | VGE=15V, IC=10A, Tj = 150C | - | - | 1.95 | V |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V, Tj = 25C | - | - | 100 | A |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V, Tj = 150C | - | - | 1000 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 10A | - | 10 | - | S |
| IGBT Dynamic Characteristics | ||||||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 1510 | - | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | - | 50 | - | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | - | 18 | - | pF |
| Gate charge | QG | VCC = 960V, IC = 15A, VGE = 15V | - | 84 | - | nC |
| IGBT Switching Characteristics | ||||||
| Turn-on delay Time | td(on) | VCC = 600V, IC = 10A, VGE = 0/15V, Rg=12, Tj = 25C | - | 22 | - | ns |
| Rise Time | tr | VCC = 600V, IC = 10A, VGE = 0/15V, Rg=12, Tj = 25C | - | 15 | - | ns |
| Turn-off delay time | td(off) | VCC = 600V, IC = 10A, VGE = 0/15V, Rg=12, Tj = 25C | - | 70 | - | ns |
| Fall time | tf | VCC = 600V, IC = 10A, VGE = 0/15V, Rg=12, Tj = 25C | - | 77 | - | ns |
| Turn-on Energy | Eon | VCC = 600V, IC = 10A, VGE = 0/15V, Rg=12, Tj = 25C | - | 1.20 | - | mJ |
| Turn-off energy | Eoff | VCC = 600V, IC = 10A, VGE = 0/15V, Rg=12, Tj = 25C | - | 0.17 | - | mJ |
| DIODE Electrical Characteristics | ||||||
| Diode Forward Voltage | VFM | IF = 10A, Tj = 25C | - | 2.3 | - | V |
| Reverse Recovery Time | Trr | IF= 15A, di/dt= 600A/s, Tj = 25C | - | 270 | - | ns |
| Reverse Recovery Current | Irr | IF= 15A, di/dt= 600A/s, Tj = 25C | - | 10 | - | A |
| Reverse Recovery Charge | Qrr | IF= 15A, di/dt= 600A/s, Tj = 25C | - | 1800 | - | nC |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | - | - | - | 1200 | V |
| DC collector current, limited by Tjmax | IC | TC = 25C | - | - | 20 | A |
| DC collector current, limited by Tjmax | IC | TC = 100C | - | - | 10 | A |
| Diode Forward current, limited by Tjmax | IF | TC = 25C | - | - | 20 | A |
| Diode Forward current, limited by Tjmax | IF | TC = 100C | - | - | 10 | A |
| Continuous Gate-emitter voltage | VGE | - | - | - | 20 | V |
| Transient Gate-emitter voltage | VGE | - | - | - | 30 | V |
| Pulsed collector current, VGE= 15V, tp limited by Tjmax | ICM | - | - | - | 40 | A |
| Short Circuit Withstand Time, VGE= 15V, VCE 600V | Tsc | - | - | - | 10 | s |
| Power dissipation , Tj=25C | Ptot | - | - | - | 260 | W |
| Operating junction temperature | Tj | - | -40 | - | 150 | C |
| Storage temperature | Ts | - | -55 | - | 150 | C |
| Soldering temperature, wave soldering 1.6mm from case for 10s | - | - | - | - | 260 | C |
| Thermal Resistance | ||||||
| IGBT thermal resistance, junction - case | R(j-c) | - | - | - | 0.69 | K/W |
| Diode thermal resistance, junction - case | R(j-c) | - | - | - | 1.5 | K/W |
| Thermal resistance, junction - ambient | R(j-a) | - | - | - | 40 | K/W |
2505231205_SPTECH-SPT10N120T1_C480172.pdf
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