650V 7A N channel Multi EPI Super Junction MOSFET with low gate charge and fast switching XCH GSD07N65E
Key Attributes
Model Number:
GSD07N65E
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
RDS(on):
700mΩ@10V,3.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6.4pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
113pF
Input Capacitance(Ciss):
400pF@25V
Pd - Power Dissipation:
35W
Gate Charge(Qg):
10.3nC@10V
Mfr. Part #:
GSD07N65E
Package:
TO-252
Product Description
Product Overview
The GSD07N65E is a 650V, 7A N-channel Multi-EPI Super-Junction Power MOSFET from XCH Semiconductor. Designed with advanced technology, it offers improved characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This MOSFET is suitable for applications requiring high voltage and efficient power handling.
Product Attributes
- Brand: XCH Semiconductor
- Model: GSD07N65E
- Technology: Multi-EPI Super-Junction
- Channel Type: N-channel
- Package: TO-252
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 650 | V | |||
| ID | Drain Current -Continuous | (TC = 25) | 7* | A | ||
| (TC = 100) | 4* | |||||
| IDM | Drain Current - Pulsed | 42 | A | |||
| VGSS | Gate-Source voltage | 30 | V | |||
| EAS | Single Pulsed Avalanche Energy | 86 | mJ | |||
| IAR | Avalanche Current | 1.7 | A | |||
| EAR | Repetitive Avalanche Energy | 0.42 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt | 15 | V/ns | |||
| dVds/dt | Drain Source voltage slope | (Vds=480V) | 50 | V/ns | ||
| PD | Power Dissipation | (TC = 25) | 35 | W | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +150 | |||
| TL | Max. Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds | 265 | ||||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-to-Case | 3.2 | /W | |||
| RCS | Thermal Resistance, Case-to-Sink | 0.8 | /W | |||
| RJA | Thermal Resistance, Junction-to-Ambient | 62 | /W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A, TJ = 25 | 600 | -- | -- | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A, TJ = 150 | -- | 650 | -- | V |
| BVDSS/TJ | Breakdown Voltage Temperature Coefficient | ID = 250A, Referenced to 25 | -- | 0.6 | -- | V/ |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | -- | -- | 10 | A |
| TJ = 150 | -- | -- | 1 | |||
| IGSSF | Gate-Body Leakage Current, Forward | VGS = 30V, VDS = 0V | -- | -- | 100 | nA |
| IGSSR | Gate-Body Leakage Current, Reverse | VGS = -30V, VDS = 0V | -- | -- | -100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.5 | -- | 4.5 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 3.5A | -- | 0.6 | 0.7 | |
| gFS | Forward Transconductance | VDS = 40V, ID = 3.5A | -- | 16 | -- | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | -- | 400 | - | pF |
| Coss | Output Capacitance | -- | 113 | - | pF | |
| Crss | Reverse Transfer Capacitance | -- | 6.4 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, ID = 3.5A RG = 20 | -- | 25 | -- | ns |
| tr | Turn-On Rise Time | -- | 55 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 110 | -- | ns | |
| tf | Turn-Off Fall Time | -- | 9 | -- | ns | |
| Qg | Total Gate Charge | VDS = 400V, ID = 3.5A VGS = 10V | -- | 10.3 | -- | nC |
| Qgs | Gate-Source Charge | -- | 4.4 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 2.9 | -- | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | -- | -- | 7 | A | |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | -- | -- | 18 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 3.5A | -- | 0.9 | 1.5 | V |
| trr | Reverse Recovery Time | VGS = 0V, IS = 3.5A dIF/dt =100A/s | -- | 190 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 2.3 | -- | C | |
2303201000_XCH-GSD07N65E_C5375282.pdf
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