Small power switching and load switch solutions using XCH XCH3401A high cell density P channel MOSFET
Key Attributes
Model Number:
XCH3401A
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
RDS(on):
42mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
71pF
Number:
1 P-Channel
Output Capacitance(Coss):
73pF
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
920pF
Gate Charge(Qg):
11.9nC@4.5V
Mfr. Part #:
XCH3401A
Package:
SOT-23
Product Description
Product Overview
The XCH3401A is a high cell density trenched P-channel MOSFET designed for efficient performance in small power switching and load switch applications. It offers excellent RDS(ON) and efficiency, meeting RoHS and Green Product requirements with full reliability approval.
Product Attributes
- Brand: XCH
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench technology
- Features: Super Low Gate Charge, Excellent CdV/dt effect decline
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-3A | --- | 42 | 55 | m |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-3A | --- | 54 | 68 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.5 | --- | -1.2 | V |
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | --- | --- | -1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | --- | --- | 100 | nA |
| Qg | Total Gate Charge | VDS=-15V , VGS=-4.5V , ID=-3A | --- | 11.9 | --- | nC |
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 920 | --- | pF |
| Coss | Output Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 73 | --- | pF |
| Crss | Reverse Transfer Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 71 | --- | pF |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | -4.3 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1.2 | V |
| VDS | Drain-Source Voltage | --- | -30 | --- | --- | V |
| VGS | Gate-Source Voltage | --- | --- | --- | 12 | V |
| ID@TA=25 | Continuous Drain Current | --- | --- | -4.1 | --- | A |
| ID@TA=70 | Continuous Drain Current | --- | --- | -3.6 | --- | A |
| IDM | Pulsed Drain Current | --- | --- | -20 | --- | A |
| PD@TA=25 | Total Power Dissipation | --- | --- | 1.4 | --- | W |
| PD@TA=70 | Total Power Dissipation | --- | --- | 0.9 | --- | W |
| TSTG | Storage Temperature Range | --- | -55 | --- | 150 | |
| TJ | Operating Junction Temperature Range | --- | -55 | --- | 150 | |
| RJA | Thermal Resistance Junction-Ambient | --- | --- | 125 | --- | /W |
| RJA | Thermal Resistance Junction-Ambient (t 10s) | --- | --- | 85 | --- | /W |
2506111631_XCH-XCH3401A_C7441492.pdf
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