Synchronous buck converter MOSFET featuring XCH XCH80N03 with low RDS ON and high cell density trench

Key Attributes
Model Number: XCH80N03
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
315pF
Number:
1 N-channel
Pd - Power Dissipation:
62.5W
Input Capacitance(Ciss):
3.075nF
Output Capacitance(Coss):
400pF
Gate Charge(Qg):
31.6nC@4.5V
Mfr. Part #:
XCH80N03
Package:
TO-252
Product Description

Product Overview

The XCH80N03 is a high cell density trench N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval, providing excellent CdV/dt effect decline.

Product Attributes

  • Brand: XCH (implied by product name)
  • Certifications: RoHS, Green Device Available

Technical Specifications

SymbolParameterConditionsMin.Typ.Max.Unit
BVDSSDrain-Source Breakdown VoltageVGS=0V , ID=250uA30V
RDS(ON)Static Drain-Source On-ResistanceVGS=10V , ID=30A4.86m
RDS(ON)Static Drain-Source On-ResistanceVGS=4.5V , ID=15A7.89VGS
VGS(th)Gate Threshold VoltageVGS=VDS , ID =250uA1.01.52.5V
IDSSDrain-Source Leakage CurrentVDS=24V , VGS=0V , TJ=251uA
IGSSGate-Source Leakage CurrentVGS=20V , VDS=0V100nA
QgTotal Gate ChargeVDS=15V , VGS=4.5V , ID=15A31.6nC
CissInput CapacitanceVDS=15V , VGS=0V , f=1MHz30754000pF
CossOutput CapacitanceVDS=15V , VGS=0V , f=1MHz400530pF
CrssReverse Transfer CapacitanceVDS=15V , VGS=0V , f=1MHz315pF
IDContinuous Drain CurrentVGS @ 10V, TC=2580A
IDContinuous Drain CurrentVGS @ 10V, TC=10050A
IDContinuous Drain CurrentVGS @ 10V, TA=2519A
IDContinuous Drain CurrentVGS @ 10V, TA=7016A
IDMPulsed Drain Current192A
EASSingle Pulse Avalanche Energy144.7mJ
IASAvalanche Current53.8A
PDTotal Power DissipationTC=2562.5W
PDTotal Power DissipationTA=252.42W
TSTGStorage Temperature Range-55175
TJOperating Junction Temperature Range-55175
RJCThermal Resistance Junction-Case2.4/W
RJAThermal Resistance Junction-Ambient62/W
RJAThermal Resistance Junction-Ambient(t 10s)25/W
BVDSSDrain-Source Breakdown VoltageVGS=0V , ID=250uA30V
BVDSS/TJBVDSS Temperature CoefficientReference to 25 , ID=1mA0.0213V/
VGS(th)Gate Threshold VoltageVGS=VDS , ID =250uA1.01.52.5V
VGS(th)VGS(th) Temperature Coefficient-5.73mV/
IDSSDrain-Source Leakage CurrentVDS=24V , VGS=0V , TJ=251uA
IDSSDrain-Source Leakage CurrentVDS=24V , VGS=0V , TJ=555uA
IGSSGate-Source Leakage CurrentVGS=20V , VDS=0V100nA
gfsForward TransconductanceVDS=5V , ID=30A26.5S
RgGate ResistanceVDS=0V , VGS=0V , f=1MHz1.42.8
QgTotal Gate ChargeVDS=15V , VGS=4.5V , ID=15A31.6nC
QgsGate-Source Charge8.6nC
QgdGate-Drain Charge11.7nC
Td(on)Turn-On Delay TimeVDD=15V , VGS=10V , RG=3.3 ID=15A9ns
TrRise Time19ns
Td(off)Turn-Off Delay Time58ns
TfFall Time15.2ns
ISContinuous Source CurrentVG=VD=0V , Force Current80A
ISMPulsed Source Current132A
VSDDiode Forward VoltageVGS=0V , IS=1A , TJ=251V
trrReverse Recovery TimeIF=30A , dI/dt=100A/s , TJ=2518nS
QrrReverse Recovery Charge8nC

2506111631_XCH-XCH80N03_C7441528.pdf

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