Current resonant inverter switching IGBT TOSHIBA GT50JR22S1WLDE S with integrated Freewheeling Diode
Key Attributes
Model Number:
GT50JR22(S1WLD,E,S
Product Custom Attributes
Td(off):
330ns
Pd - Power Dissipation:
250W
Td(on):
250ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Input Capacitance(Cies):
2.7nF
Pulsed Current- Forward(Ifm):
100A
Reverse Recovery Time(trr):
350ns
Mfr. Part #:
GT50JR22(S1WLD,E,S
Package:
TO-3P-3
Product Description
Product Overview
The GT50JR22 is a discrete Silicon N-Channel IGBT designed for current-resonant inverter switching applications. It features a 6.5th generation IGBT with an integrated Freewheeling Diode (FWD), offering high-speed switching capabilities and low saturation voltage. The device is rated for a maximum junction temperature of 175C.
Product Attributes
- Brand: Toshiba
- Start of Commercial Production: 2012-03
- Certifications: RoHS Compatible
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition |
| Absolute Maximum Ratings | ||||
| Collector-emitter voltage | VCES | 600 | V | (Tc = 25) |
| Gate-emitter voltage | VGES | 25 | V | |
| Collector current (DC) | IC | 50 | A | (Tc = 100) |
| Collector current (1 ms) | ICP | 100 | A | (Tc = 25) |
| Diode forward current (DC) | IF | 40 | A | (Tc = 100) |
| Diode forward current (100 s) | IFP | 100 | A | (Tc = 25) |
| Collector power dissipation | PC | 115 | W | (Tc = 100) |
| Collector power dissipation | PC | 230 | W | (Tc = 25) |
| Junction temperature | Tj | 175 | (max) | |
| Storage temperature | Tstg | -55 to 175 | ||
| Mounting torque | TOR | 0.8 | Nm | |
| Thermal Characteristics | ||||
| Junction-to-case thermal resistance | Rth(j-c) | 0.65 | /W | Max |
| Static Characteristics | ||||
| Gate leakage current | IGES | 100 | nA | VGE = 25 V, VCE = 0 V |
| Collector cut-off current | ICES | 1 | mA | VCE = 600 V, VGE = 0 V |
| Gate-emitter cut-off voltage | VGE(OFF) | 4.5 | V | IC = 50 mA, VCE = 5 V |
| Collector-emitter saturation voltage | VCE(sat) | 1.55 | V | IC = 50 A, VGE = 15 V (typ.) |
| Diode forward voltage | VF | 2.1 | V | IF = 15 A, VGE = 0 V (max) |
| Dynamic Characteristics | ||||
| Input capacitance | Cies | 2700 | pF | VCE = 10 V, VGE = 0 V, f = 1 MHz (typ.) |
| Switching time (rise time) | tr | 0.18 | s | Resistive load VCC = 300 V, IC = 50 A, VGG = 15 V, RG = 39 (typ.) |
| Switching time (turn-on time) | ton | 0.25 | s | Resistive load VCC = 300 V, IC = 50 A, VGG = 15 V, RG = 39 (typ.) |
| Switching time (fall time) | tf | 0.05 | s | Resistive load VCC = 300 V, IC = 50 A, VGG = 15 V, RG = 39 (typ.) |
| Switching time (turn-off time) | toff | 0.33 | s | Resistive load VCC = 300 V, IC = 50 A, VGG = 15 V, RG = 39 (typ.) |
| Reverse recovery time | trr | 0.35 | s | IF = 15 A, VGE = 0 V, di/dt = -20 A/s (typ.) |
2411220522_TOSHIBA-GT50JR22-S1WLD-E-S_C2880445.pdf
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