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quality N Channel Enhancement Mode MOSFET XCH 12N65F with High Voltage Capability and Lead Free Compliance factory
quality N Channel Enhancement Mode MOSFET XCH 12N65F with High Voltage Capability and Lead Free Compliance factory

N Channel Enhancement Mode MOSFET XCH 12N65F with High Voltage Capability and Lead Free Compliance

Key Attributes
Model Number: 12N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-
RDS(on):
800mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
4V
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Output Capacitance(Coss):
170pF
Pd - Power Dissipation:
42W
Input Capacitance(Ciss):
2.02nF
Gate Charge(Qg):
41nC@10V
Mfr. Part #:
12N65F
Package:
TO-220F
Product Description

Product Overview

The 12N65F is an N-Channel Enhancement Mode Power MOSFET designed for power switch circuits in adaptors and chargers. It offers fast switching, low ON resistance, low gate charge, and is 100% avalanche energy tested. The device features a molded plastic case with UL 94V-0 flammability classification and is lead-free in compliance with EU RoHS 2011/65/EU. It is suitable for various applications requiring efficient power management.

Product Attributes

  • Case: Molded plastic
  • Molding Material: UL Flammability Classification Rating 94V-0
  • Compliance: Lead free in compliance with EU RoHS 2011/65/EU directive
  • Mounting Position: Any

Technical Specifications

SymbolCharacteristicsUnitMinTypMaxTest Condition
BVDSSDrain-Source Breakdown VoltageV650--VGS = 0 V,ID = 250 A
IDSSDrain-Source Leakage CurrentA--1VDS = 650 V, VGS = 0 V
IGSSGate Leakage CurrentnA-- 100VGS = 30 V, VDS = 0 V
VGS(th)Gate-Source Threshold VoltageV2-4VDS = VGS , ID = 250 A
RDS(on)Drain-Source On-State Resistance-0.600.80VGS = 10 V, ID = 6 A
gfsForward TransconductanceS-12-VDS = 15 V, ID = 6 A
CissInput CapacitancepF-2020-VGS = 0 V, VDS = 25 V, f = 1 MHz
CossOutput CapacitancepF-170-VGS = 0 V, VDS = 25 V, f = 1 MHz
CrssReverse Transfer CapacitancepF-7-VGS = 0 V, VDS = 25 V, f = 1 MHz
IDContinue Drain CurrentA--12Tc=25C unless otherwise specified
IDMPulsed Drain CurrentA--48Note1:Pulse test: 300 s pulse width, 2 % duty cycle
PDPower DissipationW--42Tc=25C unless otherwise specified
VDSDrain-Source VoltageV--650Tc=25C unless otherwise specified
VGSGate-Source VoltageV-- 30Tc=25C unless otherwise specified
RJCThermal Resistance, Junction to CaseC/W-2.98-Note1:Pulse test: 300 s pulse width, 2 % duty cycle
RJAThermal Resistance, Junction to AmbientC/W-62.5-Note1:Pulse test: 300 s pulse width, 2 % duty cycle
EASSingle Pulse Avalanche EnergymJ-670-Note1:Pulse test: 300 s pulse width, 2 % duty cycle
TJOperating Temperature RangeC--150Note1:Pulse test: 300 s pulse width, 2 % duty cycle
TSTGStorage Temperature RangeC-55-+150Note1:Pulse test: 300 s pulse width, 2 % duty cycle
ISMaximun Body-Diode Continuous CurrentA--12at Ta=25C unless otherwise specified
ISMMaximun Body-Diode Pulsed CurrentA--48Note2:Pulse test: 300 s pulse width, 2 % duty cycle
VSDDrain-Source Diode Forward VoltageV--1.5ISD = 12 A
trrReverse Recovery Timens-670-ISD = 12 A, VGS = 0 V, dIF / dt = 100 A/s
QrrReverse Recovery ChargeC-4.4-ISD = 12 A, VGS = 0 V, dIF / dt = 100 A/s
td(ON)Turn-on Delay Timens-29-ID = 12 A, VDD = 520 V, VGS = 10 V
trRise Timens-27-ID = 12 A, VDD = 520 V, VGS = 10 V
td(OFF)Turn-Off Delay Timens-65-ID = 12 A, VDD = 325V, RG= 10
tfFall Timens-46-ID = 12 A, VDD = 325V, RG= 10
QGTotal Gate ChargenC-41-ID = 12 A, VDD = 520 V, VGS = 10 V
QGSGate to Source ChargenC-10-ID = 12 A, VDD = 520 V, VGS = 10 V
QGDGate to Drain ChargenC-14-ID = 12 A, VDD = 520 V, VGS = 10 V

2410010331_XCH-12N65F_C19184670.pdf

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