High Current N channel MOSFET XTX BRP100N120P8 Featuring Low Gate Charge and 100V Drain Source Voltage

Key Attributes
Model Number: BRP100N120P8
Product Custom Attributes
Mfr. Part #:
BRP100N120P8
Package:
TO220FB-3L
Product Description

Product Overview

The BRP100N120P8 is an N-channel enhancement mode Power MOSFET from XTX Technology Inc. It features ultra-low RDS(ON) and low gate charge, making it suitable for applications such as motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC and AC/DC converters and power management systems. This lead-free component offers high performance with a drain-to-source voltage of 100V and a continuous drain current of 120A.

Product Attributes

  • Brand: XTX Technology Inc.
  • Origin: China (implied by company name and contact details)
  • Certifications: Lead Free

Technical Specifications

SymbolParameterConditionMinTypMaxUnit
Off Characteristics
V(BR)DSSDrain-Source Breakdown VoltageID = 250A, VGS = 0V100--V
IDSSZero Gate Voltage Drain CurrentVDS = 100V, VGS = 0V--1uA
IGSSGate-Body Leakage CurrentVDS = 0V, VGS = ±20V--±100nA
On Characteristics
VGS(TH)Gate Threshold VoltageVDS = VGS, ID = 250uA2.03.04.0V
RDS(ON)Static Drain-Source ON-ResistanceVGS = 10V, ID = 20A3.44.25-m
Dynamic Characteristics
CissInput CapacitanceVGS = 0V, VDS = 50V, f = 1MHz556257736114pF
CossOutput CapacitanceVGS = 0V, VDS = 50V, f = 1MHz228923712445pF
CrssReverse Transfer CapacitanceVGS = 0V, VDS = 50V, f = 1MHz99106111pF
QgTotal Gate ChargeVGS = 0 to 10V, VDS = 50V, ID = 20A-64-nC
Switching Characteristics
td(on)Turn-On Delay TimeVGS = 10V, VDS = 50V, RL= 2.5Ω, RGEN = 3Ω-17-ns
trTurn-On Rise TimeVGS = 10V, VDS = 50V, RL= 2.5Ω, RGEN = 3Ω-21-ns
td(off)Turn-Off Delay TimeVGS = 10V, VDS = 50V, RL= 2.5Ω, RGEN = 3Ω-37-ns
tfTurn-Off Fall TimeVGS = 10V, VDS = 50V, RL= 2.5Ω, RGEN = 3Ω-16-ns
Drain-Source Diode Characteristics
ISContinuous Source Current---120A
VSDForward on voltageVGS = 0V, IS = 1A--1.0V
TrrReverse Recovery TimeIF = 20A, di/dt = 100A/us-66-ns
QrrReverse Recovery ChargeIF = 20A, di/dt = 100A/us-136-nC
Absolute Maximum Ratings
VDSDrain-to-Source Voltage---100V
VGSGate-to-Source Voltage--±20-V
IDContinuous Drain CurrentTC = 25°C--120A
IDContinuous Drain CurrentTC = 100°C--80A
IDMPulsed Drain Current(1)--480A
EASSingle Pulsed Avalanche Energy(2)--306mJ
PDPower Dissipation, TC = 25°C---192W
RJCThermal Resistance, Junction to Case--0.65-°C/W
TJ, TSTGJunction & Storage Temperature Range--55-+150°C

2509261615_XTX-BRP100N120P8_C51966733.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.