High Current N channel MOSFET XTX BRP100N120P8 Featuring Low Gate Charge and 100V Drain Source Voltage
Product Overview
The BRP100N120P8 is an N-channel enhancement mode Power MOSFET from XTX Technology Inc. It features ultra-low RDS(ON) and low gate charge, making it suitable for applications such as motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC and AC/DC converters and power management systems. This lead-free component offers high performance with a drain-to-source voltage of 100V and a continuous drain current of 120A.
Product Attributes
- Brand: XTX Technology Inc.
- Origin: China (implied by company name and contact details)
- Certifications: Lead Free
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | ID = 250A, VGS = 0V | 100 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 100V, VGS = 0V | - | - | 1 | uA |
| IGSS | Gate-Body Leakage Current | VDS = 0V, VGS = ±20V | - | - | ±100 | nA |
| On Characteristics | ||||||
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = 250uA | 2.0 | 3.0 | 4.0 | V |
| RDS(ON) | Static Drain-Source ON-Resistance | VGS = 10V, ID = 20A | 3.4 | 4.25 | - | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS = 0V, VDS = 50V, f = 1MHz | 5562 | 5773 | 6114 | pF |
| Coss | Output Capacitance | VGS = 0V, VDS = 50V, f = 1MHz | 2289 | 2371 | 2445 | pF |
| Crss | Reverse Transfer Capacitance | VGS = 0V, VDS = 50V, f = 1MHz | 99 | 106 | 111 | pF |
| Qg | Total Gate Charge | VGS = 0 to 10V, VDS = 50V, ID = 20A | - | 64 | - | nC |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VGS = 10V, VDS = 50V, RL= 2.5Ω, RGEN = 3Ω | - | 17 | - | ns |
| tr | Turn-On Rise Time | VGS = 10V, VDS = 50V, RL= 2.5Ω, RGEN = 3Ω | - | 21 | - | ns |
| td(off) | Turn-Off Delay Time | VGS = 10V, VDS = 50V, RL= 2.5Ω, RGEN = 3Ω | - | 37 | - | ns |
| tf | Turn-Off Fall Time | VGS = 10V, VDS = 50V, RL= 2.5Ω, RGEN = 3Ω | - | 16 | - | ns |
| Drain-Source Diode Characteristics | ||||||
| IS | Continuous Source Current | - | - | - | 120 | A |
| VSD | Forward on voltage | VGS = 0V, IS = 1A | - | - | 1.0 | V |
| Trr | Reverse Recovery Time | IF = 20A, di/dt = 100A/us | - | 66 | - | ns |
| Qrr | Reverse Recovery Charge | IF = 20A, di/dt = 100A/us | - | 136 | - | nC |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-to-Source Voltage | - | - | - | 100 | V |
| VGS | Gate-to-Source Voltage | - | - | ±20 | - | V |
| ID | Continuous Drain Current | TC = 25°C | - | - | 120 | A |
| ID | Continuous Drain Current | TC = 100°C | - | - | 80 | A |
| IDM | Pulsed Drain Current | (1) | - | - | 480 | A |
| EAS | Single Pulsed Avalanche Energy | (2) | - | - | 306 | mJ |
| PD | Power Dissipation, TC = 25°C | - | - | - | 192 | W |
| RJC | Thermal Resistance, Junction to Case | - | - | 0.65 | - | °C/W |
| TJ, TSTG | Junction & Storage Temperature Range | - | -55 | - | +150 | °C |
2509261615_XTX-BRP100N120P8_C51966733.pdf
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