Fast Switching Diode Taiwan Semiconductor 1N4148W-G RHG Featuring RoHS Compliant Halogen Free Green Compound
Key Attributes
Model Number:
1N4148W-G RHG
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
4ns
Pd - Power Dissipation:
350mW
Operating Junction Temperature Range:
-65℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
Independent
Reverse Leakage Current (Ir):
2.5uA@75V
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
1N4148W-G RHG
Package:
SOD-123
Product Description
Product Overview
The 1N4148W-G is a fast switching SMD diode designed for surface mount applications. It features a fast switching speed with a reverse recovery time (trr) of less than 4.0ns, making it suitable for high-speed switching circuits. This device is moisture sensitivity level 1, halogen-free, and compliant with RoHS and WEEE directives. It is packaged in a small outline SOD-123 plastic package with a matte tin lead finish.
Product Attributes
- Brand: Taiwan Semiconductor
- Package: SOD-123
- Lead Finish: Matte Tin (Sn) with Nickel (Ni) underplate
- Certifications: Halogen-free according to IEC 61249-2-21, Compliant to RoHS Directive 2011/65/EU, Compliant to WEEE 2002/96/EC
- Moisture Sensitivity Level: 1
- Soldering: High temperature soldering guaranteed : 260C/10s, solderable per MIL-STD-202, Method 208
- Color: Green compound (indicated by PART NO. suffix G)
Technical Specifications
| PART NO. | PARAMETER | SYMBOL | UNIT | VALUE | TEST CONDITIONS |
| 1N4148W-G | Repetitive peak reverse voltage | VRRM | V | 100 | |
| DC blocking voltage | VR | V | 100 | ||
| RMS reverse voltage | VR(RMS) | V | 75 | ||
| Work peak reverse voltage | VRWM | V | 100 | ||
| Repetitive peak forward current | IFRM | mA | 300 | ||
| Mean forward current | IO | mA | 150 | ||
| Non-repetitive peak forward surge current @ t=1 ms | IFSM | A | 2.0 | ||
| Non-repetitive peak forward surge current @ t=10 ms | IFSM | A | 1.0 | ||
| 1N4148W-G | Forward voltage | VF | V | 1.000 MAX | IF=50mA |
| Forward voltage | VF | V | 0.855 TYP | IF=10mA | |
| Reverse leakage current | IR | nA | 2.5 MAX | VR=20V | |
| Reverse leakage current | IR | A | 0.1 MAX | VR=75V, TJ=150C | |
| Reverse leakage current | IR | A | 30 MAX | VR=25V, TJ=150C | |
| 1N4148W-G | Junction capacitance | CJ | pF | 4.0 MAX | VR=0, f=1.0MHz |
| Reverse recovery time | trr | ns | <4.0 | IF=10mA, IR=10mA, RL=100, IRR=1mA | |
| 1N4148W-G | Power dissipation | PD | mW | 350 MAX | (Note 1) |
| 1N4148W-G | Thermal resistance (Junction to Ambient) | RJA | C/W | 357 MAX | (Note 1) |
| 1N4148W-G | Junction and storage temperature range | TJ , TSTG | C | -65 to +150 |
2501081518_Taiwan-Semiconductor-1N4148W-G-RHG_C483898.pdf
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