NPN transistor XZT BC817-25 featuring low collector emitter saturation voltage and high current gain
Key Attributes
Model Number:
BC817-25
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
160@100mA,1V
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
700mV@500mA,50mA
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC817-25
Package:
SOT-23
Product Description
Product Overview
The BC817 is an NPN transistor designed for general AF applications. It features high collector current, high current gain, and low collector-emitter saturation voltage. Its complementary type is the BC807 (PNP).
Product Attributes
- Brand: X T ELECTRONICS
- Product Type: Transistor (NPN)
- Package: SOT-23
- Complementary Type: BC807 (PNP)
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | IC= 10A, IE=0 | 50 | V | ||
| Collector-Emitter Voltage | VCEO | IC= 10mA, IB=0 | 45 | V | ||
| Emitter-Base Voltage | VEBO | IE= 1A, IC=0 | 5 | V | ||
| Collector Current | IC | 500 | mA | |||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 300 | mW | ||
| Thermal Resistance Junction To Ambient | RJA | 417 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | VCBO | IC= 10A, IE=0 | 50 | V | ||
| Collector-emitter breakdown voltage | VCEO | IC= 10mA, IB=0 | 45 | V | ||
| Emitter-base breakdown voltage | VEBO | IE= 1A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB= 45 V , IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 4V, IC=0 | 0.1 | A | ||
| DC current gain (Rank BC817-16) | hFE(1) | VCE=1V, IC= 100mA | 100 | 250 | ||
| DC current gain (Rank BC817-25) | hFE(1) | VCE=1V, IC= 100mA | 160 | 400 | ||
| DC current gain (Rank BC817-40) | hFE(1) | VCE=1V, IC= 100mA | 250 | 600 | ||
| DC current gain | hFE(2) | VCE=1V, IC= 500mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC= 500mA, IB= 50mA | 0.7 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC= 500mA, IB= 50mA | 1.2 | V | ||
| Base-emitter voltage | VBE | VCE= 1 V, IC= 500mA | 1.2 | V | ||
| Collector capacitance | Cob | VCB=10V ,f=1MHz | 10 | pF | ||
| Transition frequency | fT | VCE= 5 V, IC=10mA, f=100MHz | 100 | MHz |
2410121936_XZT-BC817-25_C5805810.pdf
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