Low resistance N Channel MOSFET VBsemi Elec AOD4130-VB designed for power switching at high temperatures
Key Attributes
Model Number:
AOD4130-VB
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+175℃
RDS(on):
25mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
140pF
Input Capacitance(Ciss):
1.5nF@25V
Pd - Power Dissipation:
100W
Gate Charge(Qg):
11nC@10V
Mfr. Part #:
AOD4130-VB
Package:
TO-252
Product Description
Product Overview
The AOD4130-VB is a N-Channel Trench Power MOSFET designed for high-performance applications. It features a high junction temperature capability of 175 C and a low on-resistance (rDS(on)) of 0.025 at VGS = 10 V. This MOSFET is ideal for power switching applications requiring efficiency and reliability.
Product Attributes
- Brand: VBsemi
- Origin: Taiwan
- Certifications: RoHS Compliant, Halogen-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Typical | Min | Max | Unit |
| Drain-Source Breakdown Voltage | BRD | VGS = 0 V, ID = 250 A | 60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 1.0 | 3.0 | V | |
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS = 20 V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 60 V, VGS = 0 V, TJ = 125 C | 1 | A | ||
| On-State Drain Current | ID(on) | VDS = 5 V, VGS = 10 V | 50 | A | ||
| Drain-Source On-State Resistance | rDS(on) | VGS = 10 V, ID = 15 A | 0.025 | |||
| Drain-Source On-State Resistance | rDS(on) | VGS = 4.5 V, ID = 10 A | 0.030 | |||
| Forward Transconductance | gfs | VDS = 15 V, ID = 15 A | 20 | S | ||
| Input Capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1 MHz | 150 | pF | ||
| Output Capacitance | Coss | VGS = 0 V, VDS = 25 V, f = 1 MHz | 140 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0 V, VDS = 25 V, f = 1 MHz | 60 | pF | ||
| Total Gate Charge | Qg | VDS = 30 V, VGS = 10 V, ID = 23 A | 11 | 17 | nC | |
| Gate-Source Charge | Qgs | VDS = 30 V, VGS = 10 V, ID = 23 A | 3 | nC | ||
| Gate-Drain Charge | Qgd | VDS = 30 V, VGS = 10 V, ID = 23 A | 3 | nC | ||
| Turn-On Delay Time | td(on) | VDD = 30 V, RL = 1.3 ID 23 A, VGEN = 10 V, Rg = 2.5 | 8 | 15 | ns | |
| Rise Time | tr | VDD = 30 V, RL = 1.3 ID 23 A, VGEN = 10 V, Rg = 2.5 | 15 | 25 | ns | |
| Turn-Off Delay Time | td(off) | VDD = 30 V, RL = 1.3 ID 23 A, VGEN = 10 V, Rg = 2.5 | 30 | 45 | ns | |
| Fall Time | tf | VDD = 30 V, RL = 1.3 ID 23 A, VGEN = 10 V, Rg = 2.5 | 25 | 40 | ns | |
| Pulsed Current | SM | 50 | A | |||
| Diode Forward Voltage | VSD | IF = 15 A, VGS = 0 V | 1.0 | 1.5 | V | |
| Reverse Recovery Time | trr | IF = 15 A, di/dt = 100 A/s | 30 | 60 | ns |
2504171620_VBsemi-Elec-AOD4130-VB_C878919.pdf
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