Power MOSFET VBsemi Elec SPW20N60S5FKSA1 VB 600V N Channel Super Junction for Telecom Power Supplies
Key Attributes
Model Number:
SPW20N60S5FKSA1-VB
Product Custom Attributes
Mfr. Part #:
SPW20N60S5FKSA1-VB
Package:
TO-247
Product Description
Product Overview
The SPW20N60S5FKSA1-VB is a N-Channel 600V Super Junction Power MOSFET designed for high-efficiency power supply applications. It features a low figure-of-merit (FOM) Ron x Qg, low input capacitance (Ciss), reduced switching and conduction losses, ultra low gate charge (Qg), and is avalanche energy rated (UIS). This MOSFET is ideal for server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC), and lighting applications such as high-intensity discharge (HID) and fluorescent ballast lighting.
Product Attributes
- Brand: VBsemi
- Origin: Taiwan
- Certifications: RoHS compliant, Halogen-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Voltage | VDS | 600 | V | |||
| Gate-Source Voltage | VGS | ± 30 | V | |||
| Continuous Drain Current (TC = 150 °C) | ID | VGS at 10 V, TC = 25 °C | 20 | A | ||
| Continuous Drain Current (TC = 100 °C) | ID | VGS at 10 V, TC = 100 °C | 12 | A | ||
| Pulsed Drain Current | IDM | a | 60 | A | ||
| Single Pulse Avalanche Energy | EAS | b | 1000 | mJ | ||
| Maximum Power Dissipation | PD | 160 | W | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | +150 | °C | ||
| Drain-Source Voltage Slope | dV/dt | TJ = 125 °C | 50 | V/ns | ||
| Reverse Diode dV/dt | d | 15 | ||||
| Soldering Recommendations (Peak Temperature) | for 10 s | 260 | °C | |||
| Static Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 1 mA | 600 | V | ||
| VDS Temperature Coefficient | ΔVDS/T | Reference to 25 °C, ID = 1 mA | 0.70 | V/°C | ||
| Gate-Source Threshold Voltage (N) | VGS(th) | VDS = VGS, ID = 250 μA | 2.5 | 4.5 | V | |
| Gate-Source Leakage | IGSS | VGS = ± 20 V | ± 100 | nA | ||
| Gate-Source Leakage | IGSS | VGS = ± 30 V | ± 1 | μA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 600V, VGS = 0 V | 1 | μA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 480 V, VGS = 0 V, TJ = 125 °C | 100 | μA | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 7A | 0.160 | Ω | ||
| Forward Transconductance | gfs | VDS = 30 V, ID = 7A | 5.6 | S | ||
| Input Capacitance | Ciss | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2300 | pF | ||
| Output Capacitance | Coss | 330 | pF | |||
| Reverse Transfer Capacitance | Crss | 4 | pF | |||
| Effective Output Capacitance, Energy Related | Co(er) | a | 63 | pF | ||
| Effective Output Capacitance, Time Related | Co(tr) | b | 213 | pF | ||
| Total Gate Charge | Qg | ID = 20 A, VDS = 520 V, VGS = 10 V | 62 | nC | ||
| Gate-Source Charge | Qgs | 39 | nC | |||
| Gate-Drain Charge | Qg d | 47 | nC | |||
| Turn-On Delay Time | td(on) | VDD = 520 V, ID = 20A, VGS = 10 V, Rg = 9.1 Ω | 18 | 25 | ns | |
| Rise Time | tr | 24 | 55 | ns | ||
| Turn-Off Delay Time | td(off) | 80 | 120 | ns | ||
| Fall Time | tf | 12 | 20 | ns | ||
| Gate Input Resistance | Rg | f = 1 MHz, open drain | 0.8 | Ω | ||
| Continuous Source-Drain Diode Current | IS | 20 | A | |||
| Pulsed Diode Forward Current | ISM | 60 | A | |||
| Diode Forward Voltage | VSD | IS = 8 A, VGS = 0 V, TJ = 25 °C | 1.5 | V | ||
| Reverse Recovery Time | trr | IS = 8 A, dI/dt = 100 A/μs, VR = 400 V, TJ = 25 °C | 520 | ns | ||
| Reverse Recovery Charge | Qrr | 5.8 | μC | |||
| Reverse Recovery Current | IRRM | 45 | A | |||
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | 62 | °C/W | |||
| Maximum Junction-to-Case (Drain) Thermal Resistance | RthJC | 0.38 | °C/W |
2508211600_VBsemi-Elec-SPW20N60S5FKSA1-VB_C50387038.pdf
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