switching 40V N Channel MOSFET UMW IPP015N04N G UMW designed for SMPS and DC DC converter solutions
Key Attributes
Model Number:
IPP015N04N G(UMW)
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
120A
RDS(on):
1.5mΩ@10V,100A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@200uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF
Output Capacitance(Coss):
5.3nF
Pd - Power Dissipation:
250W
Input Capacitance(Ciss):
20nF
Gate Charge(Qg):
250nC@10V
Mfr. Part #:
IPP015N04N G(UMW)
Package:
TO-220
Product Description
Product Overview
The UMW IPP015N04N is a 40V N-Channel MOSFET designed for high-performance switching applications. It features fast switching speeds, very low on-resistance (RDS(ON)), and an excellent gate charge x RDS(ON) product (FOM), making it ideal for Switched-Mode Power Supplies (SMPS) and DC/DC converters. Optimized technology ensures efficient operation in demanding power applications.
Product Attributes
- Brand: UMW
- Origin: UTD Semiconductor Co., Limited
- Certifications: IEC climatic category; DIN IEC 68-1 (55/175/56)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V, ID=1mA | 40 | V | ||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=200A | 1.2 | 1.5 | V | |
| Gate-source leakage current | IGSS | VGS=20V, VDS=0V | 200 | nA | ||
| Drain-source on-state resistance | RDS(ON) | VGS=10V, ID=100A | 1.5 | m | ||
| Gate resistance | RG | VGS=0V, VDS=20V, f=1MHz | 10 | |||
| Transconductance | gFS | |VDS|>2|ID|RDS(ON)max, ID=100 A | 230 | S | ||
| Input capacitance | Ciss | VDD=20V, VGS=10V, ID=30A, RG=1.6 | 15000 | 20000 | pF | |
| Output capacitance | Coss | VDD=20V, VGS=10V, ID=100A | 4000 | 5300 | pF | |
| Reverse transfer capacitance | Crss | 40 | 100 | pF | ||
| Turn-on delay time | tD(on) | 10 | ns | |||
| Rise time | tr | 40 | ns | |||
| Turn-off delay time | tD(off) | 10 | ns | |||
| Fall time | tf | 23 | ns | |||
| Gate to source charge | Qgs | 75 | nC | |||
| Gate charge at threshold | Qg(th) | 188 | nC | |||
| Gate to drain charge | Qgd | 5 | nC | |||
| Switching charge | QSW | 40 | nC | |||
| Gate charge total | Qg | 2 | nC | |||
| Gate plateau voltage | VpIateau | 120 | V | |||
| Output charge | Qoss | VDS=0.1V, VGS=0 to 10V | 177 | nC | ||
| Diode continuous forward current | IS | VGS=0V, IF=100A, TJ=25C | 120 | A | ||
| Diode pulse current | IS,puIse | 400 | A | |||
| Diode forward voltage | VSD | VR=15V, IF=IS, diF/dt=400A/s | 0.88 | 1.2 | V | |
| Reverse recovery charge | Qrr | TC=25C | 141 | nC | ||
| Continuous drain current | ID | VGS=10V, TC=25C | 120 | A | ||
| Continuous drain current | ID | VGS=10V, TC=100C | 86.5 | A | ||
| Pulsed drain current | ID,puIse | VGS=10V, TC=25C | 400 | A | ||
| Avalanche current, single pulse | IAS | VGS=10V, TC=25C | 120 | A | ||
| Avalanche energy, single pulse | EAS | ID=100A, RGS=25 | 400 | mJ | ||
| Gate source voltage | VGS | 20 | V | |||
| Power dissipation | Ptot | TC=25C | 250 | W | ||
| Storage temperature | TJ,TSTG | -55 | 175 | C | ||
| Thermal resistance, junction -case | RthJC | 1.2 | K/W | |||
| Thermal resistance, junction -ambient (SMD version) | RthJA | Device on PCB, 6 cm2 cooling area | 40 | K/W | ||
| Zero gate voltage drain current | IDSS | VDS=40V, VGS=0V, TJ=25C | 0.1 | 20 | A | |
| Zero gate voltage drain current | IDSS | VDS=40V, VGS=0V, TJ=125C | 200 | A |
2512241859_UMW-IPP015N04N-G-UMW_C19100590.pdf
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