86--136 6733 2386
quality Power MOSFET VBsemi Elec VBMB1208N with Full Avalanche Rating and Low Gate Charge Characteristics factory
quality Power MOSFET VBsemi Elec VBMB1208N with Full Avalanche Rating and Low Gate Charge Characteristics factory

Power MOSFET VBsemi Elec VBMB1208N with Full Avalanche Rating and Low Gate Charge Characteristics

Key Attributes
Model Number: VBMB1208N
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
14A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@10V,11A
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
130pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
430pF
Input Capacitance(Ciss):
1.3nF
Pd - Power Dissipation:
42W
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
VBMB1208N
Package:
TO-220F
Product Description

Product Overview

The VBMB1208N is a high-performance N-Channel MOSFET designed for various power applications. It features a low-profile through-hole package with a TO-220 FULLPAK configuration, offering excellent thermal performance and ease of integration. Key advantages include a high operating temperature of 150 C, fast switching capabilities, and full avalanche rating, making it suitable for demanding environments. This MOSFET is halogen-free and compliant with RoHS directives, ensuring environmental responsibility.

Product Attributes

  • Brand: VBsemi
  • Product Type: N-Channel MOSFET
  • Package: TO-220 FULLPAK
  • Certifications: Halogen-free (IEC 61249-2-21 Definition), RoHS Directive 2002/95/EC
  • Origin: Taiwan

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Drain-Source Voltage VDS VGS = 0 V, ID = 250 A 200 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 2.0 - 4.0 V
Drain-Source On-State Resistance RDS(on) VGS = 10 V, ID = 11 A - 0.065 -
Total Gate Charge Qg VGS = 10 V, ID = 20 A, VDS = 160 V - - 70 nC
Continuous Drain Current ID TC = 25 C, VGS at 10 V - - 20 A
Continuous Drain Current ID TC = 100 C, VGS at 10 V - - 14 A
Pulsed Drain Current IDM a, e - - 72 A
Single Pulse Avalanche Energy EAS b, e - - 580 mJ
Maximum Power Dissipation PD TC = 25 C - - 42 W
Maximum Power Dissipation PD TA = 25 C - - 13 W
Operating Junction and Storage Temperature Range TJ, Tstg - -55 - +150 C
Maximum Junction-to-Case (Drain) RthJC - - - 1.0 C/W
Continuous Source-Drain Diode Current IS - - - 20 A
Pulsed Diode Forward Current ISM a - - 72 A
Body Diode Voltage VSD TJ = 25 C, IS = 20 A, VGS = 0 Vb - - 2.0 V
Body Diode Reverse Recovery Time trr TJ = 25 C, IF = 20 A, dI/dt = 100 A/sb, c - 300 610 ns
Body Diode Reverse Recovery Charge Qrr - - 3.4 7.1 C

2409300833_VBsemi-Elec-VBMB1208N_C481030.pdf

Related Products
quality NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency factory
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
quality Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications factory
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
quality Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control factory
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
quality 400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications factory
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.