High reliability semiconductor module UNI-SEMIC APG250N01 suitable for electronic circuit applications
Key Attributes
Model Number:
APG250N01
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
40A
RDS(on):
38mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
23.5pF
Number:
1 N-channel
Output Capacitance(Coss):
310pF
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
822pF
Gate Charge(Qg):
22.7nC@50V
Mfr. Part #:
APG250N01
Package:
TO-220
Product Description
Product Overview
The APG250N01 is a semiconductor product from UNI-SEMICONDUCTOR CO.,LTD. This datasheet provides technical specifications and package information for the APG250N01.
Product Attributes
- Brand: UNI-SEMICONDUCTOR CO.,LTD
- Company Name:
- Website: www.uni-semic.com
- Contact Number: 0575-85087896
- Version: 1.1
- Copyright: /
- Release Date: 2021/08
- Address: 25454/5
- Email: htw@uni-semic.com
- Revision History: 2018/04/19, Version 1.0, First Release
- Layout adjustment
Technical Specifications
| Ref. | Dimensions (Millimeters) | Dimensions (Inches) | ||||
| Min. | Typ. | Max. | Min. | Typ. | Max. | |
| A | 4.40 | 4.60 | 0.173 | 0.181 | ||
| B | 0.70 | 0.90 | 0.028 | 0.035 | ||
| C | 0.45 | 0.60 | 0.018 | 0.024 | ||
| C2 | 1.23 | 1.32 | 0.048 | 0.052 | ||
| C3 | 2.20 | 2.60 | 0.087 | 0.102 | ||
| D | 9.90 | 10.3 | 0.390 | 0.406 | ||
| E | 28.0 | 29.8 | 1.102 | 1.173 | ||
| F | 1.102 | 1.173 | 0.043 | 0.046 | ||
| G | 1.14 | 1.70 | 0.045 | 0.067 | ||
| H | 8.90 | 9.90 | 0.350 | 0.390 | ||
| L1 | 2.54 | 0.1 | ||||
| L2 | 0.35 | 0.014 | ||||
| L3 | 3.6 | Max | 0.142 | Max |
2509301615_UNI-SEMIC-APG250N01_C41374780.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
