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quality 600V IGBT VBsemi Elec VBP16I80 Featuring Ultra Low Gate Charge for Telecommunications Power Supplies factory
quality 600V IGBT VBsemi Elec VBP16I80 Featuring Ultra Low Gate Charge for Telecommunications Power Supplies factory

600V IGBT VBsemi Elec VBP16I80 Featuring Ultra Low Gate Charge for Telecommunications Power Supplies

Key Attributes
Model Number: VBP16I80
Product Custom Attributes
Mfr. Part #:
VBP16I80
Package:
TO-247
Product Description

Product Overview

The VBP16I80 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, ultra-low gate charge (Qg), and is avalanche energy rated (UIS). This IGBT is suitable for a wide range of applications including telecommunications power supplies, lighting ballasts, consumer and computing power supplies, industrial applications like welding and battery chargers, renewable energy inverters, and general switch mode power supplies (SMPS).

Product Attributes

  • Brand: VBsemi
  • Model: VBP16I80
  • Package: TO-247
  • Technology: Trench and Fieldstop IGBT
  • Certifications: RoHS compliant, Halogen-free

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Collector-Emitter Voltage VCE - - - 600 V
Continuous Collector Current IC TC=25 - - 160 A
Continuous Collector Current IC TC=100 - - 80 A
Pulsed Collector Current ICM - - - 240 A
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15 V, IC = 80 A - - 1.8 V
Collector-Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A 600 - - V
Gate-Source Threshold Voltage VGE(th) VCE = VGE, ID = 250 A 4 5 6 V
Zero Gate Voltage Collector Current ICES VCE = 600 V, VGE = 0 V, TJ = 25 C - 1 20 A
Zero Gate Voltage Collector Current ICES VCE = 600 V, VGE = 0 V, TJ = 150 C - - 1000 A
Gate-Emitter Leakage Current IGES VCE = 0 V, VGS = 20 V - - 100 nA
Forward Transconductance gfs VCE = 20 V, IC = 80 A - 1 7 S
Input Capacitance Cies VGE = 0 V, VCE = 25 V, f = 500 KHz - 8200 - pF
Output Capacitance Coes - - 210 - pF
Reverse Transfer Capacitance Cres - - 165 - pF
Total Gate Charge Qg VGE = 20 V, IC = 80 A, VCE = 400 V - 80 - nC
Gate-Emitter Charge Qge - - 82 - nC
Gate to Collector Charge Qgc - - 115 - nC
Turn-on Delay Time td(on) - - 92 - ns
Rise Time tr - - 50 - ns
Turn-off Delay Time td(off) - - 154 - ns
Fall Time tf - - 28 - ns
Internal emitter inductance LE - - 13 - nH
Diode Forward Current IF - - - 80 A
Pulsed Diode Forward Current IFM - - - 240 A
Diode Forward Voltage VF IF = 80 A - - 2.1 V
Reverse Recovery Time trr TJ = 25 C, IF = 80 A, dIF/dt = 200 A/s, VR = 400 V - - 73 ns
Reverse Recovery Charge Qrr - - 0.51 - C
Reverse Recovery Current IRRM - - 9 - A
Maximum Power Dissipation PD TC = 25 C - - 340 W
Maximum Power Dissipation PD TC = 100 C - - 180 W
Operating Junction and Storage Temperature Range TJ, Tstg - -55 - +175 C
Short Circuit Withstand Time tSC TC=150, VGE=15V, VCE400V - 3 - s
Short Circuit Withstand Time tSC TC=100, VGE=15V, VCE330V - 5 - s
Soldering Recommendations (Peak Temperature) - for 10 s - - 260 C
Maximum Junction-to-Ambient Thermal Resistance RthJA - - - 40 C/W
Maximum Junction-to-Case Thermal Resistance RthJC - - 0.5 - C/W

2412131800_VBsemi-Elec-VBP16I80_C42412443.pdf

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