Small Signal Dual PNP Transistor YANGJIE UMT1N in SOT363 Package with UL94 V0 and RoHS Certification
Key Attributes
Model Number:
UMT1N
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
DC Current Gain:
120@1mA,6V
Transition Frequency(fT):
140MHz
Vce Saturation(VCE(sat)):
500mV
Type:
PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
UMT1N
Package:
SOT-363
Product Description
Product Overview
The UMT1N is a dual PNP small signal transistor in a SOT-363 surface mount package, ideally suited for automatic insertion. It features epoxy that meets UL-94 V-0 flammability rating and tin-plated leads solderable per J-STD-002 and JESD22-B102. This transistor is designed for general electronic applications.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: UMT1N
- Package: SOT-363
- Flammability Rating: UL-94 V-0
- Certifications: RoHS Compliant
- Marking: T1
Technical Specifications
| Item | Symbol | Unit | Conditions | Value |
| Collector-Base Voltage | VCBO | V | IC=-50A,IE=0 | -60 |
| Collector-Emitter Voltage | VCEO | V | IC =-1mA,IB=0 | -50 |
| Emitter-Base Voltage | VEBO | V | IE=-50A,IC=0 | -6 |
| Collector Current | IC | mA | -150 | |
| Total Device Dissipation | PC | mW | Ta=25 | 200 |
| Junction Temperature | Tj | -55 to +150 | ||
| Storage Temperature | TSTG | -55 to +150 | ||
| Collector-base breakdown voltage | V(BR)CBO | V | IC=-50A,IE=0 | -60 |
| Collector-emitter breakdown voltage | V(BR)CEO | V | IC =-1mA,IB=0 | -50 |
| Emitter-base breakdown voltage | V(BR)EBO | V | IE=-50A,IC=0 | -6 |
| Collector-Base cut-off current | ICBO | nA | VCB=-60V,IB=0 | -100 |
| Emitter-Base cut-off current | IEBO | nA | VEB=-6V,IC=0 | -100 |
| DC current gain | hFE | VCE=-6V,IC=-1mA | 120 - 560 | |
| Collector-emitter saturation voltage | VCE(sat) | V | IC=-50mA,IB=-5mA | -0.5 |
| Transition frequency | Ft | MHz | VCE=-12V,IE=2mA,f=100MHz | 140 |
| Output capacitance | Cob | pF | VCB=-12V,IE=0A,f=1MHz | 5 |
2410121920_YANGJIE-UMT1N_C968431.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
