Center Amplifying Gate Thyristor VISHAY VS-ST330C16L1L with 650 Amp Average On State Current Rating
Key Attributes
Model Number:
VS-ST330C16L1L
Product Custom Attributes
Holding Current (Ih):
600mA
Current - Gate Trigger(Igt):
200mA
Voltage - On State(Vtm):
1.96V
Current - On State(It(RMS)):
1.42kA
Peak Off - State Voltage(Vdrm):
1.6kV
SCR Type:
1 SCR
Gate Trigger Voltage (Vgt):
3V
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
VS-ST330C16L1L
Package:
TO-200AB
Product Description
Product Overview
The Vishay Semiconductors VS-ST330CL Series comprises high-performance Phase Control Thyristors in a Hockey PUK version. These thyristors feature a center amplifying gate for enhanced control and are housed in a metal case with a ceramic insulator, conforming to the international standard B-PUK (TO-200AC) package. Designed and qualified for industrial-level applications, they are suitable for DC motor controls, controlled DC power supplies, and AC controllers. Key electrical specifications include an average on-state current (IT(AV)) of 650 A and repetitive peak off-state voltage (VDRM/VRRM) options ranging from 400 V to 1600 V.
Product Attributes
- Brand: Vishay Semiconductors
- Package Type: B-PUK (TO-200AC)
- Gate Type: Center amplifying gate
- Case Material: Metal with ceramic insulator
- Qualification: Industrial level
- Material Categorization: Refer to www.vishay.com/doc?99912 for compliance definitions.
Technical Specifications
| Parameter | Test Conditions | Values | Units |
|---|---|---|---|
| Maximum average on-state current (IT(AV)) | 180 conduction, half sine wave, double side (single side) cooled | 650 (314) | A |
| Heatsink Temperature (Ths) for IT(AV) | 55 (75) | C | |
| Maximum RMS on-state current (IT(RMS)) | DC at 25 C heatsink temperature, double side cooled | 1230 | A |
| Maximum peak, one-cycle non-repetitive surge current (ITSM) | t = 10 ms, No voltage reapplied, Sinusoidal half wave, initial TJ = TJ maximum | 9000 | A |
| Maximum peak, one-cycle non-repetitive surge current (ITSM) | t = 8.3 ms, No voltage reapplied, Sinusoidal half wave, initial TJ = TJ maximum | 9420 | A |
| Maximum I2t for fusing (I2t) | t = 10 ms, No voltage reapplied | 405 | kAs |
| Maximum I2t for fusing (I2t) | t = 8.3 ms, No voltage reapplied | 370 | kAs |
| Repetitive peak off-state voltage (VDRM/VRRM) | 400 to 1600 | V | |
| Typical turn-off time (tq) | ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 , tp = 500 s | 100 | s |
| Maximum operating junction temperature range (TJ) | -40 to +125 | C | |
| Maximum thermal resistance, junction to heatsink (RthJ-hs) | DC operation, single side cooled | 0.11 | K/W |
| Maximum thermal resistance, junction to heatsink (RthJ-hs) | DC operation, double side cooled | 0.06 | K/W |
| Mounting force | 10 % | 9800 (1000) | N (kg) |
| Approximate weight | 250 | g | |
| Case style | B-PUK (TO-200AC) | ||
| Maximum average gate power (PG(AV)) | TJ = TJ maximum, f = 50 Hz, d% = 50 | 2.0 | |
| Maximum peak positive gate current (IGM) | TJ = TJ maximum, tp 5 ms | 3.0 | A |
| Maximum peak positive gate voltage (+VGM) | TJ = TJ maximum, tp 5 ms | 20 | V |
| DC gate current required to trigger (IGT) | TJ = 25 C | 100 to 200 | mA |
| DC gate voltage required to trigger (VGT) | TJ = 25 C | 1.8 to 3.0 | V |
Ordering Information:
Device code: VS-ST330C[Voltage Code]L-1
Example: VS-ST330C16L-1
Voltage Codes: 04 (400V), 08 (800V), 12 (1200V), 14 (1400V), 16 (1600V)
Links to Related Documents:
- Dimensions: www.vishay.com/doc?95076
2411272151_VISHAY-VS-ST330C16L1L_C17666581.pdf
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