VBsemi Elec IRF7473TRPBF VB 100 Volt N Channel MOSFET with Low Qgd and RoHS Directive Compliance SO8
Key Attributes
Model Number:
IRF7473TRPBF-VB
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
32mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF@50V
Number:
1 N-channel
Output Capacitance(Coss):
150pF
Pd - Power Dissipation:
14W
Input Capacitance(Ciss):
1.9nF@50V
Gate Charge(Qg):
28.5nC@10V
Mfr. Part #:
IRF7473TRPBF-VB
Package:
SO-8
Product Description
Product Overview
The IRF7473TRPBF-VB is a N-Channel 100 V (D-S) MOSFET designed for primary side switching applications. It features extremely low Qgd for reduced switching losses, 100% Rg tested, and 100% avalanche tested. This device is compliant with RoHS Directive 2002/95/EC and Halogen-free according to IEC 61249-2-21 Definition.
Product Attributes
- Brand: VBsemi
- Certifications: Halogen-free, RoHS Directive 2002/95/EC
- Package Type: SO-8
Technical Specifications
| Parameter | Symbol | Limit | Unit | Test Conditions |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ± 20 | V | |
| Continuous Drain Current (TJ = 150 °C) | ID | 9a | A | TC = 25 °C |
| Continuous Drain Current (TJ = 150 °C) | ID | 6a,b | A | TC = 70 °C |
| Pulsed Drain Current | IDM | 40b,c | A | TA = 25 °C |
| Continuous Source-Drain Diode Current | IS | 7 | A | TC = 25 °C |
| Single Pulse Avalanche Current (L = 0.1 mH) | IAS | 30 | A | |
| Single Pulse Avalanche Energy | EAS | 112 | mJ | |
| Maximum Power Dissipation | PD | 14b | W | TC = 25 °C |
| Maximum Power Dissipation | PD | 5b,c | W | TC = 70 °C |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | °C | |
| Thermal Resistance Ratings | ||||
| Maximum Junction-to-Ambient | RthJA | 33 / 40 | °C/W | Typical / Maximum (t ≤ 10 s)b,f |
| Maximum Junction-to-Foot (Drain) | RthJF | 17 / 21 | °C/W | Steady Stateb |
| Specifications | ||||
| Static Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0 V, ID = 250 µA |
| VDS Temperature Coefficient | ΔVDS /ΔT J | 172 | mV/°C | ID = 250 µA |
| VGS(th) Temperature Coefficient | ΔVGS(th) /ΔT J | -10 | mV/°C | VDS = VGS , ID = 250 µA |
| Gate-Source Threshold Voltage | VGS(th) | 1.0 / 3.0 | V | ID = 250 µA |
| Gate-Source Leakage | IGSS | ± 100 | nA | VDS = 0 V, VGS = ± 20 V |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 100 V, VGS = 0 V |
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 100 V, VGS = 0 V, TJ = 55 °C |
| On-State Drain Current | ID(on) | 30 | A | VDS ≥ 10 V, VGS = 10 Va |
| Drain-Source On-State Resistance | RDS(on) | 2 / 3 | mΩ | VGS = 10 V, ID = 5 Aa |
| Drain-Source On-State Resistance | RDS(on) | 33 | mΩ | VGS = 4.5 V, ID = 5 Aa |
| Forward Transconductance | gfs | 20 | S | VDS = 15 V, ID = 5 Aa |
| Dynamic | ||||
| Input Capacitance | Ciss | 1900 | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz |
| Output Capacitance | Coss | 150 | pF | VDS = 75 V, VGS = 10 V, ID = 5 A |
| Reverse Transfer Capacitance | Crss | 50 | pF | VDS = 75 V, VGS = 10 V, ID = 5 A |
| Total Gate Charge | Qg | 28.5 / 43 | nC | VDS = 75 V, VGS = 10 V, ID = 5 A |
| Gate-Source Charge | Qgs | 23 / 35 | nC | VDS = 75 V, VGS = 8 V, ID = 5 A |
| Gate-Drain Charge | Qgd | 6.5 | nC | VDS = 75 V, VGS = 8 V, ID = 5 A |
| Gate Resistance | Rg | 0.8 / 1.3 | Ω | f = 1 MHz |
| Switching Times (VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω) | ||||
| Turn-on Delay Time | td(on) | 14 / 21 | ns | |
| Rise Time | tr | 12 / 18 | ns | |
| Turn-Off Delay Time | td(off) | 22 / 33 | ns | |
| Fall Time | tf | 6 / 10 | ns | |
| Switching Times (VDD = 50 V, RL = 10 Ω, ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω) | ||||
| Turn-On Delay Time | td(on) | 16 / 24 | ns | |
| Rise Time | tr | 12 / 18 | ns | |
| Turn-Off Delay Time | td(off) | 20 / 30 | ns | |
| Fall Time | tf | 7 / 12 | ns | |
| Drain-Source Body Diode Characteristics | ||||
| Continuous Source-Drain Diode Current | IS | 7.7 | A | TC = 25 °C |
| Pulse Diode Forward Current | ISM | 50 | A | |
| Body Diode Voltage | VSD | 0.77 / 1.2 | V | IS = 2.6 A |
| Body Diode Reverse Recovery Time | trr | 63 / 95 | ns | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C |
| Body Diode Reverse Recovery Charge | Qrr | 110 / 165 | nC | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C |
| Reverse Recovery Fall Time | ta | 49 | ns | |
| Reverse Recovery Rise Time | tb | 14 | ns | |
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 80 °C/W.
f. Guaranteed by design, not subject to production testing.
2410121826_VBsemi-Elec-IRF7473TRPBF-VB_C6705274.pdf
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