N Channel MOSFET VBsemi Elec IRLZ44NSPBF VB with dynamic dVdt rating and halogen free RoHS compliance
Key Attributes
Model Number:
IRLZ44NSPBF-VB
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
32mΩ@10V;35mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
1 N-channel
Pd - Power Dissipation:
150W
Output Capacitance(Coss):
1nF
Input Capacitance(Ciss):
3nF
Gate Charge(Qg):
60nC@5V
Mfr. Part #:
IRLZ44NSPBF-VB
Package:
TO-263(D2PAK)
Product Description
Product Overview
The IRLZ44NSPBF-VB is a high-performance N-Channel MOSFET designed for various electronic applications. It features a logic-level gate drive, fast switching capabilities, and a dynamic dV/dt rating, making it suitable for demanding circuit designs. This MOSFET is halogen-free and compliant with RoHS directives, ensuring environmental responsibility.
Product Attributes
- Brand: VBsemi
- Origin: Taiwan
- Certifications: RoHS Directive 2002/95/EC, Halogen-free According to IEC 61249-2-21 Definition
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| N-Channel MOSFET | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±10 | V | |||
| Continuous Drain Current (TC = 25 °C, VGS at 10 V) | ID | 50 | A | |||
| Continuous Drain Current (TC = 100 °C) | ID | 36 | A | |||
| Pulsed Drain Current | IDM | 200 | A | |||
| Linear Derating Factor | 1.0 | W/°C | ||||
| Linear Derating Factor (PCB Mount) | 0.025 | |||||
| Single Pulse Avalanche Energy | EAS | VDD = 25 V, starting TJ = 25 °C, L = 179 μH, Rg = 25 Ω, IAS = 51 A | 400 | mJ | ||
| Maximum Power Dissipation (TC = 25 °C) | PD | 150 | W | |||
| Maximum Power Dissipation (PCB Mount, TA = 25 °C) | PD | 3.7 | ||||
| Peak Diode Recovery dV/dt | dV/dt | ISD ≤ 51 A, dI/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 175 °C | 4.5 | V/ns | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | +175 | °C | ||
| Soldering Recommendations (Peak Temperature) | 1.6 mm from case | 300 for 10 s | °C | |||
| RDS(on) (VDS = 60 V, ID = 50 A) | VGS = 10 V | 0.032 | Ω | |||
| RDS(on) (VDS = 60 V, ID = 40 A) | VGS = 4.5 V | 0.035 | Ω | |||
| Static Drain-Source Breakdown Voltage | VDS | VGS = 0, ID = 250 μA | 60 | V | ||
| VDS Temperature Coefficient | ΔVDS/T | Reference to 25 °C, ID = 1 mA | 0.070 | V/°C | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 μA | 1.0 | 3.0 | V | |
| Gate-Source Leakage | IGSS | VGS = ±10 V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 60 V, VGS = 0 V | 25 | μA | ||
| Zero Gate Voltage Drain Current (VDS = 48 V, VGS = 0 V, TJ = 150 °C) | IDSS | 250 | μA | |||
| Drain-Source On-State Resistance | RDS(on) | ID = 21 A, VGS = 10 V | 0.030 | 0.032 | Ω | |
| Drain-Source On-State Resistance | RDS(on) | ID = 15 A, VGS = 4.5 V | 0.030 | 0.035 | Ω | |
| Forward Transconductance | gfs | VDS = 25 V, ID = 21A | 23 | S | ||
| Input Capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 3000 | pF | ||
| Output Capacitance | Coss | pF | ||||
| Reverse Transfer Capacitance | Crss | pF | ||||
| Total Gate Charge | Qg | ID = 51 A, VGS = 5.0 V, VDS = 48 V | 66 | nC | ||
| Gate-Source Charge | Qgs | nC | ||||
| Gate-Drain Charge | Qgd | nC | ||||
| Turn-On Delay Time | td(on) | VDD = 30 V, ID = 51 A, Rg = 4.6 Ω, RD = 0.56 Ω | 17 | ns | ||
| Rise Time | tr | 230 | ns | |||
| Turn-Off Delay Time | td(off) | 42 | ns | |||
| Fall Time | tf | 110 | ns | |||
| Internal Drain Inductance | LD | Between lead, 6 mm (0.25") from package and center of die contact | 4.5 | nH | ||
| Internal Source Inductance | LS | 7.5 | nH | |||
| Continuous Source-Drain Diode Current | IS | 50 | A | |||
| Pulsed Diode Forward Current | ISM | 200 | A | |||
| Body Diode Voltage | VSD | TJ = 25 °C, IS = 51 A, VGS = 0 V | 2.5 | V | ||
| Body Diode Reverse Recovery Time | trr | TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μs | 130 | 180 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | 0.84 | 1.3 | μC |
2410121821_VBsemi-Elec-IRLZ44NSPBF-VB_C19188232.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
