VBsemi Elec AO4812 VB Dual N Channel Trench Power MOSFET Suitable for Low Current DC DC Applications
Key Attributes
Model Number:
AO4812-VB
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
22mΩ@10V;26mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA;2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
2 N-Channel
Output Capacitance(Coss):
117pF
Input Capacitance(Ciss):
586pF
Pd - Power Dissipation:
2.7W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
AO4812-VB
Package:
SO-8
Product Description
Product Overview
The AO4812-VB is a dual N-Channel Trench Power MOSFET designed for various applications. It features 100% UIS and Rg tested, compliant with RoHS Directive 2002/95/EC, and is halogen-free. This MOSFET is suitable for low current DC/DC applications, set-top boxes, and other similar power management needs.
Product Attributes
- Brand: VBsemi
- Certifications: Halogen-free (IEC 61249-2-21), RoHS Directive 2002/95/EC
- Type: Dual N-Channel Trench Power MOSFET
- Package: SO-8
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| STATIC | ||||||
| Drain-Source Breakdown Voltage | VDS | ID = 250 A | 30 | V | ||
| VDS Temperature Coefficient | VDS /T J | ID = 250 A | 32 | mV/C | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS , ID = 250 A | 1.0 | 2.5 | V | |
| VGS(th) Temperature Coefficient | VGS(th)/T J | -5.0 | mV/C | |||
| Gate-Source Leakage | IGSS | VDS = 0 V, VGS = 20 V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 30 V, VGS = 0 V | 1 | A | ||
| VDS = 30 V, VGS = 0 V, TJ = 55 C | 10 | |||||
| On-State Drain Current | ID(on) | VDS 5 V, VGS = 10 V | 15 | A | ||
| VGS = 4.5 V, ID = 4 A | 6.8 | a | ||||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 5 A | 0.022 | 0.026 | ||
| VGS = 4.5 V, ID = 4 A | 0.026 | 0.032 | ||||
| Forward Transconductance | gfs | VDS = 10 V, ID = 5 A | 16 | S | ||
| DYNAMIC | ||||||
| Input Capacitance | Ciss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 586 | pF | ||
| Output Capacitance | Coss | 117 | ||||
| Reverse Transfer Capacitance | Crss | 55 | ||||
| Total Gate Charge | Qg | VDS = 15 V, VGS = 10 V, ID = 5 A | 3.7 | 5.6 | nC | |
| Gate-Source Charge | Qgs | VDS = 15 V, VGS = 4.5 V, ID = 5 A | 1.4 | |||
| Gate-Drain Charge | Qgd | 1.05 | ||||
| Gate Resistance | Rg | f = 1 MHz | 0.8 | 4.3 | ||
| SWITCHING TIME (VDD = 15 V, RL = 3 , ID 5 A, VGEN = 4.5 V, Rg = 1 ) | ||||||
| Turn-On Delay Time | td(on) | 12 | 24 | ns | ||
| Rise Time | tr | 55 | 100 | |||
| Turn-Off Delay Time | td(off) | 11 | 22 | |||
| Fall Time | tf | 8 | 16 | |||
| SWITCHING TIME (VDD = 15 V, RL = 3 , ID 5 A, VGEN = 10 V, Rg = 1 ) | ||||||
| Turn-On Delay Time | td(on) | 4 | 8 | ns | ||
| Rise Time | tr | 9 | 18 | |||
| Turn-Off Delay Time | td(off) | 10 | 20 | |||
| Fall Time | tf | 6 | 12 | |||
| DRAIN-SOURCE BODY DIODE CHARACTERISTICS | ||||||
| Continuous Source-Drain Diode Current | IS | TC = 25 C | 2.25 | A | ||
| TC = 70 C | 1.48 | a | ||||
| Pulse Diode Forward Current | ISM | 24 | ||||
| Body Diode Voltage | VSD | IS = 2 A, VGS = 0 V | 0.8 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF = 5 A, dI/dt = 100 A/s, TJ = 25 C | 11 | 20 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | 4 | 8 | nC | ||
| Reverse Recovery Fall Time | tf | 7 | ns | |||
| Reverse Recovery Rise Time | tr | 4 | ||||
2504171620_VBsemi-Elec-AO4812-VB_C693316.pdf
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