16A Triac BTA16-800BW Featuring 800V Peak Voltage and High dvdt Rate for Inductive Load Applications
Key Attributes
Model Number:
BTA16-800BW
Product Custom Attributes
Holding Current (Ih):
60mA
Current - Gate Trigger(Igt):
50mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
160A
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BTA16-800BW
Package:
TO-220
Product Description
Jiangsu Weida Semiconductor Co., Ltd. BTA16/BTB16 Series 16A Triacs
The BTA16/BTB16 series triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for high current shock loading, offering a high dv/dt rate and strong resistance to electromagnetic interference. With excellent commutation performance, these triacs are particularly recommended for inductive loads. The BTA16 series provides a rated insulation voltage of 2500 VRMS, complying with UL standards.
Product Attributes
- Brand: Jiangsu Weida Semiconductor Co., Ltd.
- Series: BTA16/BTB16
- Certifications: UL (File ref: E516503)
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Repetitive peak off-state voltage / Repetitive peak reverse voltage | VDRM/VRRM | 600 | V | (Tj=25) |
| 800 | ||||
| 1200 | ||||
| RMS on-state current | IT(RMS) | 16 | A | |
| Non repetitive surge peak on-state current | ITSM | 160 | A | (full cycle, F=50Hz) |
| I2t value for fusing | I2t | 128 | A2s | (tp=10ms) |
| Critical rate of rise of on-state current | dI/dt | 50 | A/s | (IG=2IGT) |
| Peak gate current | IGM | 4 | A | |
| Average gate power dissipation | PG(AV) | 1 | W | |
| Peak gate power | PGM | 5 | W | |
| Storage junction temperature range | Tstg | -40~150 | ||
| Operating junction temperature range | Tj | -40~125 | ||
| RMS on-state current | IT(RMS) | 16 | A | |
| On-state voltage (max) | VTM | 1.5 | V | (ITM=22.5A, tp=380s, Tj=25) |
| Off-state current (max) | IDRM/IRRM | 5 | A | (VDRM=VRRM, Tj=25) |
| Off-state current (max) | IDRM/IRRM | 1 | mA | (VDRM=VRRM, Tj=125) |
| Gate Trigger Current (max) | IGT | 5 | mA | (VD=12V, RL=33, Quadrant --) |
| 10 | ||||
| 35 | ||||
| Gate Trigger Voltage (max) | VGT | 1.3 | V | (VD=12V, RL=33) |
| Gate Non-Trigger Voltage (min) | VGD | 0.2 | V | (VD=VDRM) |
| Holding Current (max) | IH | 15 | mA | (IT=100mA, Quadrant -) |
| 25 | ||||
| Latching Current (max) | IL | 20 | mA | (IG=1.2IGT, Quadrant -) |
| 30 | ||||
| Critical rate of rise of commutating dv/dt (min) | dV/dt | 100 | V/s | (VD=2/3VDRM, Tj=125, Gate open) |
| Gate Trigger Current (max) | IGT | 25 | mA | (VD=12V, RL=33, Quadrant --) |
| 50 | ||||
| Gate Trigger Voltage (max) | VGT | 1.5 | V | (ALL Quadrants) |
| Gate Non-Trigger Voltage (min) | VGD | 0.2 | V | (VD=VDRM, ALL Quadrants) |
| Holding Current (max) | IH | 40 | mA | (IT=100mA, Quadrant -) |
| 60 | ||||
| Latching Current (max) | IL | 50 | mA | (IG=1.2IGT, Quadrant -) |
| 70 | ||||
| Critical rate of rise of commutating dv/dt (min) | dV/dt | 200 | V/s | (VD=2/3VDRM, Tj=125, Gate open) |
| Thermal Resistance (junction to case) | Rth(j-c) | 2.1 | /W | (AC, TO-220A) |
| 1.3 | (AC, TO-220B) | |||
| 2.3 | (AC, TO-220F) | |||
| 2.4 | (AC, TO-263) |
2410122027_WEIDA-BTA16-800BW_C2900946.pdf
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