P Channel Enhancement Mode Field Effect Transistor YANGJIE YJS4407C for Battery Protection Solutions
Key Attributes
Model Number:
YJS4407C
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
RDS(on):
10mΩ@20V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
280pF
Number:
1 P-Channel
Output Capacitance(Coss):
310pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
1.86nF
Gate Charge(Qg):
38nC@10V
Mfr. Part #:
YJS4407C
Package:
SOP-8
Product Description
YJS4407C P-Channel Enhancement Mode Field Effect Transistor
The YJS4407C is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It offers high-speed switching and is suitable for battery protection, power management, and load switch applications. The device meets UL 94 V-0 flammability rating and is Halogen Free.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS Compliant, UL 94 V-0 Flammability Rating, Moisture Sensitivity Level 3
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit | |
| Product Summary | |||||||
| Drain-Source Voltage | VDS | -30 | V | ||||
| Drain Current | ID | -12 | A | ||||
| RDS(ON) at VGS=-20V | RDS(ON) | at VGS=-20V | <10 | m | |||
| RDS(ON) at VGS=-10V | RDS(ON) | at VGS=-10V | <12 | m | |||
| RDS(ON) at VGS=-4.5V | RDS(ON) | at VGS=-4.5V | <20 | m | |||
| 100% EAS Tested | EAS | ||||||
| Absolute Maximum Ratings | |||||||
| Drain-source Voltage | VDS | TA=25 unless otherwise noted | -30 | V | |||
| Gate-source Voltage | VGS | TA=25 unless otherwise noted | 25 | V | |||
| Drain Current | ID | TA=25 | -12 | A | |||
| Drain Current | ID | TA=100 | -7.5 | A | |||
| Pulsed Drain Current | IDM | -100 | A | ||||
| Avalanche energy | EAS | 100 | mJ | ||||
| Total Power Dissipation | PD | TA=25 | 2.5 | W | |||
| Total Power Dissipation | PD | TA=100 | 1 | W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | ||||
| Thermal resistance | |||||||
| Thermal Resistance Junction-to-Ambient | RJA | Steady-State | 40 | 50 | /W | ||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=-250A | -30 | V | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | A | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V, Tj=150 | -100 | A | |||
| Gate-Body Leakage Current | IGSS | VGS= 25V, VDS=0V | 100 | nA | |||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250A | -1.2 | -1.8 | -2.8 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=-20V, ID=-12A | 7.5 | 10 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-12A | 9 | 12 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=-6V, ID=-10A | 11 | 15 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-10A | 14.5 | 20 | m | ||
| Diode Forward Voltage | VSD | IS=-12A, VGS=0V | -0.85 | -1.2 | V | ||
| Gate resistance | RG | f=1MHz | 16 | ||||
| Maximum Body-Diode Continuous Current | IS | -12 | A | ||||
| Dynamic Parameters | |||||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | 1860 | pF | |||
| Output Capacitance | Coss | VDS=-15V, VGS=0V, f=1MHz | 310 | pF | |||
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, f=1MHz | 280 | pF | |||
| Switching Parameters | |||||||
| Total Gate Charge | Qg | VGS=-10V, VDS=-15V, ID=-12A | 38 | nC | |||
| Gate-Source Charge | Qgs | VGS=-10V, VDS=-15V, ID=-12A | 5 | nC | |||
| Gate-Drain Charge | Qg d | VGS=-10V, VDS=-15V, ID=-12A | 10 | nC | |||
| Reverse Recovery Charge | Qrr | IF=-12A, di/dt=100A/us | 19 | nC | |||
| Reverse Recovery Time | trr | IF=-12A, di/dt=100A/us | 40 | ns | |||
| Turn-on Delay Time | tD(on) | VGS=-10V, VDD=-15V, ID=-12A RGEN=2.3 | 8 | ns | |||
| Turn-on Rise Time | tr | VGS=-10V, VDD=-15V, ID=-12A RGEN=2.3 | 6 | ns | |||
| Turn-off Delay Time | tD(off) | VGS=-10V, VDD=-15V, ID=-12A RGEN=2.3 | 95 | ns | |||
| Turn-off fall Time | tf | VGS=-10V, VDD=-15V, ID=-12A RGEN=2.3 | 62 | ns | |||
2410121501_YANGJIE-YJS4407C_C20605950.pdf
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