N Channel Enhancement Mode Transistor YANGJIE YJT300G10AQ for Automotive and Industrial Applications
Key Attributes
Model Number:
YJT300G10AQ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
300A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
24.7pF
Number:
1 N-channel
Output Capacitance(Coss):
1.986nF
Pd - Power Dissipation:
375W
Input Capacitance(Ciss):
10.411nF
Gate Charge(Qg):
166nC@10V
Mfr. Part #:
YJT300G10AQ
Package:
TOLL-8L
Product Description
Product Overview
The YJT300G10AQ is an N-Channel Enhancement Mode Field Effect Transistor designed for high-power applications. It features excellent heat dissipation, a high-density cell design for low RDS(ON), and meets UL 94 V-0 flammability rating. This product is AEC-Q101 qualified, making it suitable for automotive electronics. Key applications include high power inverter systems, uninterruptible power supplies, and LCDM appliances.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Part Number: YJT300G10AQ
- Certifications: AEC-Q101 qualified, RoHS compliant, UL 94 V-0 Flammability Rating, Halogen Free
- Material: Epoxy
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Limit | Unit | ||
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 100 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TA=25°C | 23 | A | ||
| TA=100°C | 16 | A | ||||
| ID | TC=25°C | 300 | A | |||
| ID | TC =100°C | 212 | A | |||
| Pulsed Drain Current | IDM | 900 | A | |||
| Avalanche energy | EAS | TJ=25°C, VDD=50V, VG=10V, RG=25Ω, L=2mH, IAS=46A. | 2116 | mJ | ||
| Total Power Dissipation | PD | TA=25°C | 3.3 | W | ||
| TA=100°C | 1.6 | W | ||||
| PD | TC=25°C | 375 | W | |||
| PD | TC =100°C | 187 | W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55+175 | °C | |||
| Thermal Resistance | ||||||
| Thermal Resistance Junction-to-Ambient Steady-State | RθJA | 38 | 45 | °C/W | ||
| Thermal Resistance Junction-to-Case Steady-State | RθJC | 0.25 | 0.5 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250μA | 100 | - | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=80V, VGS=0V | - | - | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250μA | 2 | 2.6 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=30A | - | 1.35 | 1.7 | mΩ |
| Diode Forward Voltage | VSD | IS=30A, VGS=0V | - | 0.8 | 1.3 | V |
| Gate resistance | RG | f=1MHz | - | 1.35 | - | Ω |
| Maximum Body-Diode Continuous Current | IS | - | - | 300 | A | |
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=100KHz | - | 10411 | - | pF |
| Output Capacitance | Coss | - | 1986 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 24.7 | - | pF | |
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS=50V, ID=30A | - | 166 | - | nC |
| Gate-Source Charge | Qgs | - | 34 | - | ||
| Gate-Drain Charge | Qg | - | 49 | - | ||
| Reverse Recovery Charge | Qrr | IF=30A, di/dt=100A/us | - | 167 | - | nC |
| Reverse Recovery Time | trr | - | 92 | - | ns | |
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=50V, ID=30A RGEN=4.5Ω | - | 30 | - | ns |
| Turn-on Rise Time | tr | - | 65 | - | ||
| Turn-off Delay Time | tD(off) | - | 121 | - | ||
| Turn-off fall Time | tf | - | 65 | - | ||
2410121531_YANGJIE-YJT300G10AQ_C20605967.pdf
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